Semiconductor device, network, and integrated circuit

Claim 1

A SEMI-CONDUCTOR DEVICE INCLUDING AT LEAST ONE TRANSISTOR STRUCTURE OF AT LEAST THREE LAYERS OF ALTERNATING ONE AND OPPOSITE CONDUCTIVITY TYPE, COMPRISING A WAFERSHAPED BODY OF SEMI-CONDUCTIVE MATERIAL HAVING ONE AND OPPOSITE MAJOR SURFACES EXTENDING SUBSTANTIALLY IN THE SAME DIRECTION AS ITS LONGITUDINAL DIRECTION AND COMPRISING AT LEAST FIRST AND SECOND LONGITUDINALLY-SPACED REGIONS OF OPPOSITE CONDUCTIVITY TYPE COMPLETELY SEPARATED BY A P-N JUNCTION HAVING A FIRST PORTION EXTENDING TRANSVERSELY TO THE WAFER-SHAPED BODY OVER MOST OF ITS THICKNESS TO AND INTERSECTING ONE MAJOR SURFACE AND HAVING A SECOND PORTION NEAR THE OPPOSITE MAJOR SURFACE EXTENDING IN THE LONGITUDINAL DIRECTION OF THE WAFER AND TO AND INTERSECTING THE OPPOSITE MAJOR SURFACE, SAID LONGITUDINALLY-EXTENDING JUNCTION PORTION DEFINING AN OVERLAPPING SURFACE ZONE INTERGRAL WITH THE FIRST REGION AND OF THE SAME CONDUCTIVITY TYPE EXTENDING OVER THE SECOND REGION OF THE OPPOSITE CONDUCTIVITY TYPE, SAID FIRST AND SECOND LONGITUDINALLYSPACED REGIONS BOTH EXTENDING TO AN BEING ACCESSIBLE AT BOTH THE ONE AND THE OPPOSITE MAJOR SURFACES, A THIRD LAYER REGION OF SAID OPPOSITE CONDUCTIVITY TYPE LOCATED IN THE OVERLAPPING ZONE ADJACENT SAID OPPOSITE MAJOR SURFACE AND SPACED FROM THE SECOND REGION SUCH THAT THE ENTIRE