Encapsulated diode assembly

Claim 1

A DIODE CONSTRUCTION COMPRISING IN AXIAL ALIGNMENT, A PAIR OF HEADED LEADS, EACH COMPRISING A LENGTH OF CONDUCTIVE WIRE WITH AN INTEGRAL HEAD AT THE END THEREOF, SAID HEADS HAVING PARALLEL INWARDLY FACING SURFACE AREAS LARGER THAN THE CROSS SECTIONAL AREA OF SAID WIRES AND LYING IN PLANES NORMAL TO THE LENGTH OF SAID WIRES, A WAFER OF SEMICONDUCTOR MATERIAL HAVING PARALLEL SURFACES WITH A RECTIFYING JUNCTION FORMED THEREIN AND LYING PRINCIPALLY IN A PLANE PARALLEL TO AND INTERMEDIATE SAID SURFACES AND EXTENDING TO ONE OF SAID SURFACES. A METALLIC BEAD HAVING A MELTING POINT LOWER THAN SAID SEMI-CONDUCTOR MATERIAL AXIALLY ALIGNED WITH SAID LENGTHS OF WIRE AND INTERMEDIATE AND ELECTRONICALLY CONNECTING IN A LOW OHMIC CONNECTION ONE OF SAID SURFACE AREAS WITH SAID ONE SURFACE OF SAID WAFER, A FIRST ELECTRICALLY INSULATING OXIDE LAYER BONDED TO SAID ONE SURFACE OF SAID WAFER COVERING THE INTERSECTION OF SAID RECTIFYING JUNCTION AND HAVING AN APERTURE FORMED THEREIN WITHIN WHICH SAID BEAD IS LOCATED, A SECOND ELECTRICALLY INSULATING LAYER COVERING SAID FIRST LAYER WITH AN APERTURE COINCIDENT WITH SAID FIRST MENTIONED APERTURE AND WITH A PORTION OF SAID SECOND LAYER ENGAGING AND SECURING SAID BEAD, MEANS ELECTRONICALLY CONNECTING THE OTHER OF SAID SURFACE AREAS AND THE OTHER SURFACE OF SAID WAFER, AND A QUANTITY OF POTTING MATERIAL ENCAPSULATING SAID SEMICONDUCTOR MATERIAL AND SAID INTEGRAL HEADS.