US3235779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Full wave rectifier structure and method of preparing same
Assignee: Merck and Co Inc
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Filing: 1961-06-27
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Granted: 1966-02-15
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Expires: 1981-06-27
Abstract
No abstract record available.
Inventors
- 👤 Zacharellis George
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:07
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/645; H10D8/00; H10D99/00; H10P; H10P10/00; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S257/00; Y10S257/909
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
337 words
A UNITARY SOLID STATE SEMICONDUCTOR STRUCTURE USEFUL IN OBTAINING FULL WAVE RECTIFICATION WHICH COMPRISES A UNITARY SEMICONDUCTOR BODY CONTAINING A SERIES OF POLYGONALLY DISPOSED RECTIFYING DIODES CRYSTALLOGRAPHICALLY AFFIXED TO EACH OTHER, SAID DIODES HAVING A P-N JUNCTION THEREIN; FIRST AND SECOND INPUT LEADS OHMICALLY AFFIXED TO AND CONVENIENTLY SPACED AROUND SAID SEMICONDUCTOR BODY IN SUCH A MANNER AS TO CONTACT SIMULTANEOUSLY THE P LAYER AND THE N LAYER OF THE DIODES TO WHICH THEY ARE AFFIXED; A FIRST OUTPUT LEAD OHMICALLY AFFIXED TO ONE LAYER OF SAID P-N JUNCTION AT A POINT INTERMEDIATE SAID FIRST AND SECOND INPUT LEADS AND SEPARATED THEREFROM BY A FIRST DISCONTINUITY IN THE LAYER TO WHICH SAID FIRST OUTPUT IS AFFIXED AND AT A POINT LOCATED INTERMEDIATELY OF SAID FIRST INPUT AND SAID FIRST OUTPUT, AND A SECOND DISCONTINUITY IN SAID LAYER TO WHICH SAID FIRST OUTPUT IS AFFIXED AND LOCATED INTERMEDIATELY OF SAID SECOND INPUT AND SAID FIRST OUTPUT LEAD, AND A FIRST DISCONTINUITY IN THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO WHICH SAID FIRST OUTPUT LEAD IS AFFIXED AND LOCATED INTERMEDIATELY OF SAID FIRST AND SECOND DISCONTINUITIES AND IN PROXIMITY WITH SAID FIRST OUTPUT; A SECOND OUTPUT LEAD OHMICALLY AFFIXED TO THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO THE LAYER TO WHICH SAID FIRST OUTPUT LEAD IS AFFIXED AND AT A POINT INTERMEDIATE SAID FIRST OUTPUT LEAD IS AFFIXED LEADS SUCH THAT ALL OF SAID INPUT AND OUTPUT LEADS ARE LOCATED ALTERNATELY AROUND SAID SEMICONDUCTOR BODY, SAID SECOND OUTPUT BEING SEPARATED FROM SAID FIRST AND SECOND INPUTS BY TWO DISCONTINUITIES IN THE LAYER TO WHICH SAID SECOND OUTPUT IS AFFIXED, THE FIRST OF SUCH DISCONTINUITIES BEING LOCATED INTERMEDIATELY OF SAID SECOND OUTPUT AND SAID FIRST INPUT, AND THE SECOND OF SUCH DISCONTINUITIES BEING LOCATED INTERMEDIATELY OF SAID SECOND OUTPUT AND SAID SECOND INPUT, AND AN ADDITIONAL DISCONTINUITY IN THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO THE LAYER TO WHICH SAID SECOND OUTPUT IS AFFIXED, SAID DISCONTINUITY BEING LOCATED INTERMEDIATELY OF SAID TWO DISCONTINUITIES AND IN PROXIMITY WITH SAID SECOND OUTPUT.
Claim 2
Dependent Claim
337 words
A UNITARY SOLID STATE SEMICONDUCTOR STRUCTURE USEFUL IN OBTAINING FULL WAVE RECTIFICATION WHICH COMPRISES A UNITARY SEMICONDUCTOR BODY CONTAINING A SERIES OF POLYGONALLY DISPOSED RECTIFYING DIODES CRYSTALLOGRAPHICALLY AFFIXED TO EACH OTHER, SAID DIODES HAVING A P-N JUNCTION THEREIN; FIRST AND SECOND INPUT LEADS OHMICALLY AFFIXED TO AND CONVENIENTLY SPACED AROUND SAID SEMICONDUCTOR BODY IN SUCH A MANNER AS TO CONTACT SIMULTANEOUSLY THE P LAYER AND THE N LAYER OF THE DIODES TO WHICH THEY ARE AFFIXED; A FIRST OUTPUT LEAD OHMICALLY AFFIXED TO ONE LAYER OF SAID P-N JUNCTION AT A POINT INTERMEDIATE SAID FIRST AND SECOND INPUT LEADS AND SEPARATED THEREFROM BY A FIRST DISCONTINUITY IN THE LAYER TO WHICH SAID FIRST OUTPUT IS AFFIXED AND AT A POINT LOCATED INTERMEDIATELY OF SAID FIRST INPUT AND SAID FIRST OUTPUT, AND A SECOND DISCONTINUITY IN SAID LAYER TO WHICH SAID FIRST OUTPUT IS AFFIXED AND LOCATED INTERMEDIATELY OF SAID SECOND INPUT AND SAID FIRST OUTPUT LEAD, AND A FIRST DISCONTINUITY IN THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO WHICH SAID FIRST OUTPUT LEAD IS AFFIXED AND LOCATED INTERMEDIATELY OF SAID FIRST AND SECOND DISCONTINUITIES AND IN PROXIMITY WITH SAID FIRST OUTPUT; A SECOND OUTPUT LEAD OHMICALLY AFFIXED TO THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO THE LAYER TO WHICH SAID FIRST OUTPUT LEAD IS AFFIXED AND AT A POINT INTERMEDIATE SAID FIRST OUTPUT LEAD IS AFFIXED LEADS SUCH THAT ALL OF SAID INPUT AND OUTPUT LEADS ARE LOCATED ALTERNATELY AROUND SAID SEMICONDUCTOR BODY, SAID SECOND OUTPUT BEING SEPARATED FROM SAID FIRST AND SECOND INPUTS BY TWO DISCONTINUITIES IN THE LAYER TO WHICH SAID SECOND OUTPUT IS AFFIXED, THE FIRST OF SUCH DISCONTINUITIES BEING LOCATED INTERMEDIATELY OF SAID SECOND OUTPUT AND SAID FIRST INPUT, AND THE SECOND OF SUCH DISCONTINUITIES BEING LOCATED INTERMEDIATELY OF SAID SECOND OUTPUT AND SAID SECOND INPUT, AND AN ADDITIONAL DISCONTINUITY IN THE LAYER OPPOSITE IN CONDUCTIVITY TYPE TO THE LAYER TO WHICH SAID SECOND OUTPUT IS AFFIXED, SAID DISCONTINUITY BEING LOCATED INTERMEDIATELY OF SAID TWO DISCONTINUITIES AND IN PROXIMITY WITH SAID SECOND OUTPUT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-14 | 1969-08-16 | 1970-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-14 | 1973-08-16 | 1974-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-14 | 1977-08-16 | 1978-02-15 | $7700.00 | Window Closed / Lapsed |