US3234441A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Junction transistor
Assignee: TDK Micronas GmbH
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Filing: 1962-10-18
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Granted: 1966-02-08
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Expires: 1982-10-18
Abstract
No abstract record available.
Inventors
- 👤 Neville H Fletcher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:26
CPC Classifications
H; H10; H10D; H10D99/00; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10W72/00; H10W72/50; H10W72/531; H10W72/536
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
166 words
A CIRCUIT ELEMENT COMPRISING A THIN SLAB OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE HAVING OPPOSITE MAJOR FACES, AN ELONGATED EMITTER ELECTRODE BONDED TO ONE OF THE MAJOR FACES OF THE SEMICONDUCTOR SLAB PRESENTING AN ELONGATED REGION OF OPPOSED CONDUCTIVITY TYPE MAKING AN ELONGATED RECTIFYING EMITTER JUNCTION CONTACT WITH SAID ONE MAJOR FACE, SAID RECTIFYING EMITTER JUNCTION CONTACT THROUGHOUT AT LEAST MOST OF ITS LENGTH HAVING A WIDTH NOT GREATER THAN 2MM., BASE ELECTRODE REGIONS IN OHMIC CONTACT WITH SAID ONE MAJOR FACE OF THE SEMICONDUCTOR BODY ON OPPOSITE SIDES OF THE EMITTER ELECTRODE IN CLOSELY SPACED SUBSTANTIALLY PARALLEL RELATIONSHIP TO THE EMITTER JUNCTION CONTACT ALONG SUBSTANTIALLY THE ENTIRE LENGTH OF THE LATTER, SAID BASE ELECTRODE REGIONS ALONG SUBSTANTIALLY THEIR ENTIRE LENGTH HAVING A SPACING FROM THE RECTIFYING EMITTER JUNCTION CONTACT NOT SUBSTANTIALLY GREATER THAN ONE-HALF THE WIDTH OF THE RECTIFYING EMITTER JUNCTION CONTACT, AND A COLLECTOR REGION OF OPPOSITE CONDUCTIVITY TYPE FORMING A RECTIFYING COLLECTOR JUNCTION CONTACT WITH THE OTHER MAJOR FACE OF SAID SLAB.
Claim 2
Dependent Claim
166 words
A CIRCUIT ELEMENT COMPRISING A THIN SLAB OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE HAVING OPPOSITE MAJOR FACES, AN ELONGATED EMITTER ELECTRODE BONDED TO ONE OF THE MAJOR FACES OF THE SEMICONDUCTOR SLAB PRESENTING AN ELONGATED REGION OF OPPOSED CONDUCTIVITY TYPE MAKING AN ELONGATED RECTIFYING EMITTER JUNCTION CONTACT WITH SAID ONE MAJOR FACE, SAID RECTIFYING EMITTER JUNCTION CONTACT THROUGHOUT AT LEAST MOST OF ITS LENGTH HAVING A WIDTH NOT GREATER THAN 2MM., BASE ELECTRODE REGIONS IN OHMIC CONTACT WITH SAID ONE MAJOR FACE OF THE SEMICONDUCTOR BODY ON OPPOSITE SIDES OF THE EMITTER ELECTRODE IN CLOSELY SPACED SUBSTANTIALLY PARALLEL RELATIONSHIP TO THE EMITTER JUNCTION CONTACT ALONG SUBSTANTIALLY THE ENTIRE LENGTH OF THE LATTER, SAID BASE ELECTRODE REGIONS ALONG SUBSTANTIALLY THEIR ENTIRE LENGTH HAVING A SPACING FROM THE RECTIFYING EMITTER JUNCTION CONTACT NOT SUBSTANTIALLY GREATER THAN ONE-HALF THE WIDTH OF THE RECTIFYING EMITTER JUNCTION CONTACT, AND A COLLECTOR REGION OF OPPOSITE CONDUCTIVITY TYPE FORMING A RECTIFYING COLLECTOR JUNCTION CONTACT WITH THE OTHER MAJOR FACE OF SAID SLAB.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-07 | 1969-08-09 | 1970-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-07 | 1973-08-09 | 1974-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-07 | 1977-08-09 | 1978-02-08 | $7700.00 | Window Closed / Lapsed |