US3233984A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Support assembly for materials processing and method
Assignee: AT&T Inc
•
Filing: 1963-03-11
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Granted: 1966-02-08
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Expires: 1983-03-11
Abstract
No abstract record available.
Inventors
- 👤 William C Erdman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:08
CPC Classifications
C; C30; C30B; C30B13/00; C30B29/00; C30B29/10; C30B29/40; C30B29/42; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S117/911; Y10T; Y10T29/00; Y10T29/49; Y10T29/49826; Y10T29/49908; Y10T29/49938; Y10T29/4994
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
61 words
IN THE METHOD OF REFINING CRYSTALLINE GALLIUM ARSENIDE SEMICONDUCTOR MATERIAL WHICH INCLUDES PASSING A MOLTEN ZONE ALONG A VERTICALLY DISPOSED POLYCRYSTAL ROD THEREOF, THE STEPS OF POSITIONING THE ROD UPON A GALLIUM ARSENIDE SEED CRYSTAL AND WITHIN AN UPPER TUBE MEMBER, SAID TUBE MEMBER HAVING A BULB SECTION NEAR THE UPPER END THEREOF, THEN PROVIDING A HIGH TEMPERTURE REACTIVE GAS AMBIENT
Claim 2
Dependent Claim
61 words
IN THE METHOD OF REFINING CRYSTALLINE GALLIUM ARSENIDE SEMICONDUCTOR MATERIAL WHICH INCLUDES PASSING A MOLTEN ZONE ALONG A VERTICALLY DISPOSED POLYCRYSTAL ROD THEREOF, THE STEPS OF POSITIONING THE ROD UPON A GALLIUM ARSENIDE SEED CRYSTAL AND WITHIN AN UPPER TUBE MEMBER, SAID TUBE MEMBER HAVING A BULB SECTION NEAR THE UPPER END THEREOF, THEN PROVIDING A HIGH TEMPERTURE REACTIVE GAS AMBIENT
References Cited (Backward Citations)
US2584696A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-07 | 1969-08-09 | 1970-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-07 | 1973-08-09 | 1974-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-07 | 1977-08-09 | 1978-02-08 | $7700.00 | Window Closed / Lapsed |