US3232800A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor devices by forming a damage layer on a surface of a semiconductor body and then alloying through said damage layer
Assignee: NEC Corp
•
Filing: 1962-11-21
•
Granted: 1966-02-01
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Expires: 1982-11-21
Abstract
No abstract record available.
Inventors
- 👤 Mihara Yoshinori
- 👤 Abe Shigeru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:57
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2900584A
Cited
US3009841A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-01-31 | 1969-08-02 | 1970-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-01-31 | 1973-08-02 | 1974-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-01-31 | 1977-08-02 | 1978-02-01 | $7700.00 | Window Closed / Lapsed |