Integrated structure semiconductor network forming bipolar field effect transistor

Claim 1

A SEMICONDUCTOR NETWORK COMPRISING A WAFER OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL, A FIRST REGION OF ONE CONDUTIVITY-TYPE DEFINED IN SAID WAFER, A SECOND REGION OF THE OPPOSITE CONDUCTIVITY-TYPE DEFINED IN SAID WAFER ADJACENT THE SURFACE THEREOF AND CONTIGUOUS TO SAID FIRST REGION, A THIRD REGION AND A FOURTH REGION OF SAID ONE CONDUCTIVITY-TYPE DEFINED IN SAID WAFER ADJACENT THE SURFACE THEREOF AND CONTINGUOUS TO SAID SECOND REGION, SAID THIRD AND FOURTH REGIONS BEING SPACED FROM SAID FIRST REGION BY LESS THAN A DIFFUSION LENGTH AND FROM ONE ANOTHER BY MUCH MORE THAN A DIFFUSION LENGTH, THE PORTION OF SAID SECOND REGION BETWEEN SAID FIRST AND THIRD REGIONS FORMING THE CHANNEL OF A UNIPOLAR TRANSISTOR, FIRST CONDUCTIVE SAID SECOND REGION BETWEEN SAID FIRST AND FOURTH REGIONS FORMING THE BASE OF BIPOLAR TRANSISTOR, FIRST CONDUCTIVE MEANS CONTACTING SAID SECOND REGION CLOSELY ADJACENT SAID THIRD REGION, SAID FIRST CONDUCTIVE MEANS BEING CONNECTED TO SAID BASE WITHIN SAID SECOND REGION OF SAID WAFER ONLY BY SAID CHANNEL, A SECOND CONDUCTIVE MEANS CONTACTING SAID SECOND REGION AT A POSITION SPACED FROM SAID THIRD REGION BY A DISTANCE SUBSTANTIALLY GREATER THAN THE SPACING BETWEEN SAID THIRD REGION AND SAID FIRST CONDUCTIVE MEANS WHEREBY A FIRST RESISTOR IS PROVIDED BETWEEN SAID FRIST AND SECOND CONDUCTIVE MEANS, THIRD CONDUCTIVE MEANS CONTACTING SAID FIRST REGION CLOSELY ADJACENT SAID BASE, FOURTH CONDUCTIVE MEANS CONTACTING SAID FIRST REGION AT A POSITION SPACED FROM SAID THIRD CONDUCTIVE MEANS BY A DISTANCE SUBSTANTIALLY GREATER THAN THE SPACING FROM SAID BASE TO SAID THIRD CONDUCTIVE MEANS WHEREBY A SECOND RESISTOR IS PROVIDED BETWEEN SAID THIRD AND FOURTH CONDUCTIVE MEANS, FIFTH CONDUCTIVE MEANS CONTACTING SAID FIRST REGION AT A POSITION SPACED FROM SAID THIRD CONDUCTIVE MEANS BY A DISTANCE SUBSTANTIALLY GREATER THAN THE SPACING FROM SAID BASE TO SAID THIRD CONDUCTIVE MEANS WHEREBY A THIRD RESISTOR IS PROVIDED BETWEEN SAID THIRD AND FIFTH CONDUCTIVE MEANS, MEANS FOR CONNECTING A VOLTAGE SOURCE BETWEEN SAID FOURTH CONDUCTIVE MEANS AND SAID FOURTH REGION, MEANS FOR CONNECTING SAID THIRD REGION TO SAID THIRD CONDUCTIVE MEANS, MEANS FOR APPLYING INPUT SIGNALS TO SAID FIRST CONDUCTIVE MEANS, MEANS FOR APPLYING BIASING POTENTIALS TO SAID SECOND CONDUCTIVE MEANS, AND MEANS FOR DERIVING OUTPUT SIGNALS FROM SAID FIFTH CONDUCTIVE MEANS.