Solid state junction photopotentiometer

Claim 1

A LIGHT SENSITIVE DEVICE COMPRISING: A HIGH RESISITIVITY SEMICONDUCTOR BASE OF ONE CONDUCTIVITY CHARACTERISTIC HAVING TWO REGIONS OF ANOTHER CONDUCTIVITY CHARACTERISTIC DISPOSED THEREON; THE FIRST OF SAID REGIONS HAVING A PREDETERMINED CONFIGURATION AND FORMING A FIRST LIGHT SENSITIVE JUNCTION AREA WITH SAID BASE; OHMIC CONTACTS IN SPACED RELATIONSHIP ON SAID FIRST REGION; MEANS FOR APPLYING A POTENTIAL GRADIENT ACROSS SAID FIRST REGION BETWEEN SAID CONTACTS; THE SECOND OF SAID REGIONS FORMING A SECOND LIGHT SENSITIVE JUNCTION AREA WITH SAID BASE GREATER THAN ONE MINORITY CARRIER DIFFUSION LENGTH DISTANT FROM SAID FIRST REGION, SAID SECOND REGION BEING LOCATED IN A PREDETERMINED SPACED ORIENTATION WITH RESPECT TO SAID FIRST REGION; AN OHMIC CONTACT ON SAID SECOND REGION; CIRCUIT MEANS CONNECTED BETWEEN ONE OF SAID CONTACTS ON SAID FIRST REGION AND SAID OHMIC CONTACT ON SAID SECOND REGION, AND MEANS FOR IMPINGING LIGHT ON PORTIONS OF SAID JUNCTION AREAS AND FOR SWEEPING THE LIGHT OVER THE LENGTH OF SAID AREAS TO EXPOSE INCREMENTAL PORTIONS THEREOF TO THE LIGHT.