Monolithic transistor and diode structure

Claim 1

IN COMBINATION: A MONOLITHIC SEMICONDUCTOR DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL INCLUDING AN N-TYPE CONDUCTIVITY LAYER AND A CONTIGUOUS P-TYPE CONDUCTIVITY LAYER COOPERATING TO PROVIDE A P-N JUNCTION THEREBETWEEN, A FIRST REGION OF SAID WAFER COMPRISING A RECTIFIER FORMED BY A PORTION OF SAID P-N JUNCTION AND INCLUDING A PORTION OF EACH OF SAID LAYERS, SECOND AND THIRD REGIONS OF SAID WAFER EACH INCLUDING POTIONS OF BOTH OF SAID LAYERS, THE PORTION OF SAID N-TYPE CONDUCTIVITY LAYER IN SAID FIRST REGION BEING CONNECTED TO THE PORTION OF SAID N-TYPE CONDUCTIVITY LAYER IN THE SECOND REGION, THE PORTION OF SAID P-TYPE CONDUCTIVITY LAYER IN THE FIRST REGION BEING CONNECTED TO THE PORTION OF SAID P-TYPE CONDUCTIVITY LAYER IN THE THIRD REGION; MEANS FOR SUPPLYING A CONSTANT CURRENT THROUGH THE RECTIFIER FORMED BY THE P-N JUNCTION IN THE FIRST REGION, THEREBY PERMITTING THE N-TYPE LAYER OF THE WAFER TO BE CONNECTED TO THE P-TYPE LAYER OF THE WAFER THROUGH SAID RECTIFIER; A TRANSISTOR HAVING A BASE, AN EMITTER AND A COLLECTOR, SAID BASE AND SAID EMITTER BEING CONNECTED ACROSS SAID PORTION OF SAID P-TYPE LAYER IN SAID SECOND REGION AND SAID PORTION OF SAID N-TYPE LAYER IN SAID THIRD REGION SO THAT UPON APPLICATION OF FORWARD CURRENT SIGNALS TO SAID JUNCTION PORTIONS IN SAID SECOND AND THIRD REGIONS, THE OUTPUT OF SAID TRANSISTOR IS PROPORTIONAL TO THE PRODUCT OF SAID SIGNALS.