US3202489A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gold-aluminum alloy bond electrode attachment
Assignee: Raytheon Co
•
Filing: 1959-12-01
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Granted: 1965-08-24
•
Expires: 1979-12-01
Abstract
No abstract record available.
Inventors
- 👤 Bob G Bender
- 👤 Bernstein Leonard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:27
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/30; B23K35/3013; H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07536; H10W72/07551; H10W72/50; H10W72/521; H10W72/522; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/929; Y10S428/9335; Y10S428/939; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12736; Y10T428/1275; Y10T428/12771; Y10T428/12861; Y10T428/12889
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
69 words
A METHOD OF ATTACHING ELECTRODES TO AN ALUMINUMSILICON SURFACE ON A SILICON SEMICONDUCTOR DEVICE, WHICH COMPRISES: ASSEMBLINY AND ELECTRODE, AN ESSENTIALLY GOLD-TIN EUTECTIC BONDING ALLOY OF 80% GOLD AND 20% TIN BY WEIGHT AND HAVING A MELTING TEMPERATURE BELOW 410*C., AND A SEMICONDUCTOR MATERIAL HAVING AN ALUMINUM-SILICON SURFACE; HEATING THE ASSEMBLY TO A BONDING TEMPERATURE BETWEEN THE MELTING TEMPERATURE OF SAID ALLOY AND 410* C.; AND COOLING THE ASSEMBLY.
Claim 2
Independent Claim
69 words
A METHOD OF ATTACHING ELECTRODES TO AN ALUMINUMSILICON SURFACE ON A SILICON SEMICONDUCTOR DEVICE, WHICH COMPRISES: ASSEMBLINY AND ELECTRODE, AN ESSENTIALLY GOLD-TIN EUTECTIC BONDING ALLOY OF 80% GOLD AND 20% TIN BY WEIGHT AND HAVING A MELTING TEMPERATURE BELOW 410*C., AND A SEMICONDUCTOR MATERIAL HAVING AN ALUMINUM-SILICON SURFACE; HEATING THE ASSEMBLY TO A BONDING TEMPERATURE BETWEEN THE MELTING TEMPERATURE OF SAID ALLOY AND 410* C.; AND COOLING THE ASSEMBLY.
Claim 3
Dependent Claim
46 words
A SEMICONDUCTOR DEVICE COMPRISING A SILICON TYPE SEMICONDUCTOR CRYSTAL, A PREDOMINANTLY ALUMINUM SURFACE ON SAID CRYSTAL AND AN ELECTRODE BONDED TO SAID SURFACE AT A BONDING TEMPERATURE BELOW 410*C. WITH AN ALLOY CONSISTING ESSENTIALLY OF BETWEEN 65 AND 82% GOLD BY WEIGHT AND THE BALANCE TIN.
Claim 4
Dependent Claim
46 words
A SEMICONDUCTOR DEVICE COMPRISING A SILICON TYPE SEMICONDUCTOR CRYSTAL, A PREDOMINANTLY ALUMINUM SURFACE ON SAID CRYSTAL AND AN ELECTRODE BONDED TO SAID SURFACE AT A BONDING TEMPERATURE BELOW 410*C. WITH AN ALLOY CONSISTING ESSENTIALLY OF BETWEEN 65 AND 82% GOLD BY WEIGHT AND THE BALANCE TIN.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-23 | 1969-02-22 | 1969-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-23 | 1973-02-22 | 1973-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-23 | 1977-02-22 | 1977-08-24 | $7700.00 | Window Closed / Lapsed |