US3198671A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing monocrystalline bodies of semi-conductive material
Assignee: US Philips Corp
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Filing: 1961-01-25
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Granted: 1965-08-03
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Expires: 1981-01-25
Abstract
No abstract record available.
Inventors
- 👤 Dikhoff Johannes Aloysiu Maria
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:55
CPC Classifications
C; C30; C30B; C30B13/00; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
163 words
A METHOD OF GROWING FROM A MELT A MONOCRYSTALLINE BODY OF SEMICONDUCTIVE MATERIAL WITH A SUBSTANTIALLY UNIFORM TRANSVERSE ELECTRICAL RESISTIVITY CHARACTERISTIC, COMPRISING GROWING A SINGLE CRYSTAL UNDER GIVEN GROWTH CONDITIONS FROM AN ACTIVE-IMPURITY-CONTAINING MELT OF A SEMICONDUCTIVE MATERIAL WITH THE CRYSTAL ORIENTED RELATIVE TO THE LIQUID-SOLID INTERFACE TO PRODUCE CORE-FORMATION, A CONDITION AT WHICH ACTIVE IMPURITIES IN THE MELT BECOME INCORPORATED IN DIFFERENT CONCENTRATIONS IN A CORE PORTION AND A MARGINAL PORTION OF THE GROWN CRYSTAL, EACH ACTIVE IMPURITY EXHIBITING A SPECIFIC CORE-FORMATION FACTOR, A, DETERMINED BY THE GIVEN GROWTH CONDITIONS AND DEFINED AS THE RATIO OF THE SAID IMPURITY''S CONCENTRATION IN THE CORE PORTION AND THE SAID IMPURITY''S CONCENTRATION IN THE MARGINAL PORTION OF THE GROWN CRYSTAL, AND PROVIDING IN THE MELT FROM WHICH THE CRYSTAL IS GROWN AT LEAST TWO ACTIVE IMPURITIES SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS AND HAVING DIFFERENT CORE-FORMATION FACTORS, A, AND IN CONCENTRATIONS, C, AT WHICH A QUANTITY A IS SUBSTANTIALLY EQUALTO +1, WHEREIN
Claim 2
Independent Claim
163 words
A METHOD OF GROWING FROM A MELT A MONOCRYSTALLINE BODY OF SEMICONDUCTIVE MATERIAL WITH A SUBSTANTIALLY UNIFORM TRANSVERSE ELECTRICAL RESISTIVITY CHARACTERISTIC, COMPRISING GROWING A SINGLE CRYSTAL UNDER GIVEN GROWTH CONDITIONS FROM AN ACTIVE-IMPURITY-CONTAINING MELT OF A SEMICONDUCTIVE MATERIAL WITH THE CRYSTAL ORIENTED RELATIVE TO THE LIQUID-SOLID INTERFACE TO PRODUCE CORE-FORMATION, A CONDITION AT WHICH ACTIVE IMPURITIES IN THE MELT BECOME INCORPORATED IN DIFFERENT CONCENTRATIONS IN A CORE PORTION AND A MARGINAL PORTION OF THE GROWN CRYSTAL, EACH ACTIVE IMPURITY EXHIBITING A SPECIFIC CORE-FORMATION FACTOR, A, DETERMINED BY THE GIVEN GROWTH CONDITIONS AND DEFINED AS THE RATIO OF THE SAID IMPURITY''S CONCENTRATION IN THE CORE PORTION AND THE SAID IMPURITY''S CONCENTRATION IN THE MARGINAL PORTION OF THE GROWN CRYSTAL, AND PROVIDING IN THE MELT FROM WHICH THE CRYSTAL IS GROWN AT LEAST TWO ACTIVE IMPURITIES SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS AND HAVING DIFFERENT CORE-FORMATION FACTORS, A, AND IN CONCENTRATIONS, C, AT WHICH A QUANTITY A IS SUBSTANTIALLY EQUALTO +1, WHEREIN
References Cited (Backward Citations)
US2879189A
Cited
US2861905A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-02 | 1969-02-01 | 1969-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-02 | 1973-02-01 | 1973-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-02 | 1977-02-01 | 1977-08-03 | $7700.00 | Window Closed / Lapsed |