US3196327A
Expired / Lapsed
US
⏱️ 0.0 years remaining
P-i-n semiconductor with improved breakdown voltage
Assignee: Individual
•
Filing: 1961-09-19
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Granted: 1965-07-20
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Expires: 1981-09-19
Abstract
No abstract record available.
Inventors
- 👤 Jr Donald C Dickson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
67 words
AN IMPROVED SEMICONDUCTOR DEVICE HAVING P,N AND N+ LAYERS; A UNIFORM, VOLTAGE FIELD-FORCING CYLINDER IN CONTACT WITH AND ENCIRCLING SAID DEVICE IN ELECTRICAL SHUT WITH A PN JUNCTION FORMED BY SAID P AND N LAYERS; SAID CYLINDER COMPRISING MATERIAL HAVING A LOWER RESISTIVITY THAN SAID N LAYER AND SAID CYLINDER HAVING MEANS FOR INCREASING THE LEAKAGE CURRENT AND FOR INCREASING THE BREAKDOWN VOLTAGE OF THE PN JUNCTION.
Claim 2
Dependent Claim
67 words
AN IMPROVED SEMICONDUCTOR DEVICE HAVING P,N AND N+ LAYERS; A UNIFORM, VOLTAGE FIELD-FORCING CYLINDER IN CONTACT WITH AND ENCIRCLING SAID DEVICE IN ELECTRICAL SHUT WITH A PN JUNCTION FORMED BY SAID P AND N LAYERS; SAID CYLINDER COMPRISING MATERIAL HAVING A LOWER RESISTIVITY THAN SAID N LAYER AND SAID CYLINDER HAVING MEANS FOR INCREASING THE LEAKAGE CURRENT AND FOR INCREASING THE BREAKDOWN VOLTAGE OF THE PN JUNCTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-07-19 | 1969-01-18 | 1969-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-07-19 | 1973-01-18 | 1973-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-07-19 | 1977-01-18 | 1977-07-20 | $7700.00 | Window Closed / Lapsed |