Orthogonal write system for magnetic memories

Claim 1

IN A MAGNETIC MEMORY ELEMENT, THE COMBINATION OF: A PIECE OF MAGNETIC MATERIAL HAVING FIRST AND SECOND OPENINGS THERETHROUGH PERPENDICULAR TO EACH OTHER WITH A FLUX ZONE THEREBETWEEN, A FIRST FLUX PATH ABOUT SAID FIRST OPENING, AND A SECOND FLUX PATH ABOUT SAID SECOND OPENING INTERSECTING AND PERPENDICULAR TO SAID FIRST FLUX PATH IN SAID FLUX ZONE; FIRST MEANS FOR GENERATING A FIRST PULSE OF CURRENT IN SAID FIRST OPENING TO PRODUCE A FLUX IN SAID FIRST PATH TO WRITE INFORMATION INTO THE ELEMENT, WITH THE MAGNITUDE OF THE CURRENT LESS THAN THAT CAPABLE OF SWITCHING THE POLARITY OF THE REMANENT FLUX IN THE FIRST PATH, AND WITH THE POLARITY OF THE CURRENT BEING A FUNCTION OF THE INFORMATION TO BE STORED; SECOND MEANS FOR GENERATING A SECOND OSCILLATING BIPOLAR CURRENT IN SAID SECOND OPENING TO PRODUCE A FLUX IN SAID SECOND PATH, WITH THE SECOND CURRENT COINCIDING WITH AND OSCILLATING A PLURALITY OF TIMES DURING THE DURATION OF THE FIRST CURRENT; STROBE MEANS FOR GENERATING A STROBE CURRENT PULSE IN SAID SECOND OPENING TO PRODUCE A FLUX IN SAID SECOND PATH FOR READING STORED INFORMATION FROM THE ELEMENT; AND OUTPUT MEANS FOR DETERMINING FLUX CHANGES OCCURRING IN SAID FIRST PATH DURING SAID STROBE CURRENT PULSE, WITH THE POLARITY OF SUCH FLUX CHANGES BEING A FUNCTION ONLY OF THE POLARITY OF THE PRECEDING FIRST CURRENT AND INDEPENDENT OF THE POLARITY OF THE STROBE CURRENT.