Method of manufacturing a magnet core for use as a memory element

Claim 1

A METHOD OF MANUGACTURING AN ANNULAR MAGNET CORE HAVING AN OUTER DIAMETER OF NOT MORE THAN 4 MMS. AND PARTICULARLY ADAPTED FOR USE IM ELECTRONIC COMPUTING DEVICES COMPRISING THE STEPS OF FORMING A MIXTURE CONSTITUTED OF ABOUT 30 TO 55 MOL PERCENT OF FE2O3, ABOUT 30 TO 65 MOL PERCENT OF MNO, UP TO ABOUT 15 MOL PERCENT CUO, AND NOT MORE THAN 15 MOL PERCENT ZNO, PRESINGERING SAID MIXTURE AT A TEMPERATURE OF ABOUT 500*C. TO 1000*C., COMMINUTING THE PRESINTERED PRODUCT, MOLDING THE COMMINUTED PORDUCT INTO AN ANNULAR CORE HAVING AN OUTER DIAMETER LESS THAN ABOUT 4 MMS., HEATING THE ANNULAR CORE IN A ZONE HAVING AN ATOMSPHERE CONTAINING AT LEAST AS MUCH OXYGEN AS AIR AT A TEMPERATURE OF ABOUT 1150* C. TO 1350*C.M SLOWLY COOLING SAID BOCY TO A TEMPERATURE OF AT LEAST 700*C. AND NOT MORE THAN 1050*C. IN THE HEATING ZONE, AND REMOVING THE CORE FROM SAID ZONE AND RAPIDLY COOLING AND CORE IN AIR AT AMBIENT TEMPERATURE TO FORM A CORE HAVING A SUBSTANTIALLY SQUARE HYSTERESIS LOOP HAVING A RATIO ID:IM OF AT LEAST 0.61, AND A VALUE OF Q AT MOST EQUAL TO 0.15, WHERE IM IS THE PEAK VALUE OF A CURRENT PULSE AT WHICH A MAGNETIC FIELD IS PRODUCED IN THE CORE HAVING A VALUE OF HM,ID IS THE PEAK VALUE OF CURRENT PULSE AT WHICH A MAGNETIC FIELD IS PRODUCED IN THE CORE HAVING A VALUE HD,HM BEING THE MAGNETIC FIELD WHICH PRODUCES A FLUX DENSITY BM AT WHICH THE HYSTERSIS LOOP CLOSES AND HD HAS A VALUE LESS THAN HM AND AT WHICH A REMANENT FLUX DENSITY BRD+ IS PRODUCED WHICH IS THE LIMIT VALUE OF REMANENT FLUX DENSITY WHEN A FIELD -HD IS SUCCESSIVELY APPLIED AND REMOVED FROM THE CORE, Q IS A RATIO BETWEEN FLUX VARIATIONS UNDERLYING DVZ AND RVL, DVZ BEING A VOLTAGE PULSE PROPORTIONAL TO BM+-BRD+ WHERE BM+ IS THE MAXIMUM FLUX DENSITY AT WHCIH THE HYSTERESIS LOOP CLOSES, AND RVL IS A VOLTAGE PULSE PROPORTIONAL TO BM--BRD+ WHERE BM-IS THE REMANENT FLUX DENSITY AFTER A FIELD -HM IS REMOVED.

Claim 2

A METHOD OF MANUGACTURING AN ANNULAR MAGNET CORE HAVING AN OUTER DIAMETER OF NOT MORE THAN 4 MMS. AND PARTICULARLY ADAPTED FOR USE IM ELECTRONIC COMPUTING DEVICES COMPRISING THE STEPS OF FORMING A MIXTURE CONSTITUTED OF ABOUT 30 TO 55 MOL PERCENT OF FE2O3, ABOUT 30 TO 65 MOL PERCENT OF MNO, UP TO ABOUT 15 MOL PERCENT CUO, AND NOT MORE THAN 15 MOL PERCENT ZNO, PRESINGERING SAID MIXTURE AT A TEMPERATURE OF ABOUT 500*C. TO 1000*C., COMMINUTING THE PRESINTERED PRODUCT, MOLDING THE COMMINUTED PORDUCT INTO AN ANNULAR CORE HAVING AN OUTER DIAMETER LESS THAN ABOUT 4 MMS., HEATING THE ANNULAR CORE IN A ZONE HAVING AN ATOMSPHERE CONTAINING AT LEAST AS MUCH OXYGEN AS AIR AT A TEMPERATURE OF ABOUT 1150* C. TO 1350*C.M SLOWLY COOLING SAID BOCY TO A TEMPERATURE OF AT LEAST 700*C. AND NOT MORE THAN 1050*C. IN THE HEATING ZONE, AND REMOVING THE CORE FROM SAID ZONE AND RAPIDLY COOLING AND CORE IN AIR AT AMBIENT TEMPERATURE TO FORM A CORE HAVING A SUBSTANTIALLY SQUARE HYSTERESIS LOOP HAVING A RATIO ID:IM OF AT LEAST 0.61, AND A VALUE OF Q AT MOST EQUAL TO 0.15, WHERE IM IS THE PEAK VALUE OF A CURRENT PULSE AT WHICH A MAGNETIC FIELD IS PRODUCED IN THE CORE HAVING A VALUE OF HM,ID IS THE PEAK VALUE OF CURRENT PULSE AT WHICH A MAGNETIC FIELD IS PRODUCED IN THE CORE HAVING A VALUE HD,HM BEING THE MAGNETIC FIELD WHICH PRODUCES A FLUX DENSITY BM AT WHICH THE HYSTERSIS LOOP CLOSES AND HD HAS A VALUE LESS THAN HM AND AT WHICH A REMANENT FLUX DENSITY BRD+ IS PRODUCED WHICH IS THE LIMIT VALUE OF REMANENT FLUX DENSITY WHEN A FIELD -HD IS SUCCESSIVELY APPLIED AND REMOVED FROM THE CORE, Q IS A RATIO BETWEEN FLUX VARIATIONS UNDERLYING DVZ AND RVL, DVZ BEING A VOLTAGE PULSE PROPORTIONAL TO BM+-BRD+ WHERE BM+ IS THE MAXIMUM FLUX DENSITY AT WHCIH THE HYSTERESIS LOOP CLOSES, AND RVL IS A VOLTAGE PULSE PROPORTIONAL TO BM--BRD+ WHERE BM-IS THE REMANENT FLUX DENSITY AFTER A FIELD -HM IS REMOVED.