Semiconductor devices providing the functions of a plurality of conventional components

Claim 1

A SOLID-STATE AMPLIFIER DEVICE COMPRISING A UNITARY BODY OF SEMICONDUCTOR MATERIAL INCLUDING A CONTINUOUS LAYER OF A MATERIAL A RESISTIVITY OF AT LEAST 50 OHMCENTIMETERS, SECOND AND THIRD LAYERS OF OPPOSITE CONDUCTIVITY TYPE MATERIAL DISPOSED ON OPPOSITE SIDES OF SAID CONTINUOUS LAYER, SAID SECOND LAYER FORMING A RECTIFYING JUNCTION WITH SAID CONTINUOUS LAYER, SAID SECOND AND THIRD LAYERS EACH COMPRISED OF A PLURALITY OF DISCRETE PORTIONS OF WHICH A FIRST PORTION OF SAID THIRD LAYER IS OPPOSED BY FIRST AND SECOND PORTIONS OF SAID SECOND LAYER AND A SECOND PORTION OF SAID THIRD LAYER IS OPPOSED BY A THIRD PORTION OF SAID SECOND LAYER, SAID FIRST AND SECOND PORTIONS OF SAID SECOND LAYER EACH HAVING A REGION OF OPPOSITE CONDUCTIVITY TYPE THEREON REMOTE FROM SAID CONTINUOUS LAYER COMPRISING FIRST AND SECOND EMITTER REGIONS, SAID FIRST AND SECOND PORTIONS OF SAID SECOND LAYER COMPRISING FIRST AND SECOND BASE REGIONS, SAID FIRST PORTION OF SAID THIRD LAYER COMPRISING A COMMON COLLECTOR REGION, SAID SECOND PORTION OF SAID THIRD LAYER AND SAID THIRD PORTION OF SAID SECOND LAYER COMPRISING AN ENERGY STORAGE REGION OF CAPABLE OF FUNCTIONING AS A CAPACITOR, FIRST MEANS TO CONDUCTIVELY INTERCONNECT SAID FIRST EMITTER REGION AND SAID SECOND BASE REGION; AND SECOND MEANS TO CONDUCTIVELY INTERCONNECT SAID SECOND EMITTER REGION AND SAID THIRD PORTION OF SAID SECOND LAYER.