Semiconductor amplitude modulator apparatus

Claim 1

MODULATOR APPARATUS COMPRISNG, A CIRCUIT ADAPTED TO HAVE IMPRESSED THEREON CARRIER FREQUENCY SIGNALS, A UTILIZATION DEVICE, SAID CIRCUIT MEANS INCLUDING TRIODE TRANSISTOR MEANS, P-N JUNCTION MEANS HAVING TWO REGIONS OF DIFFERENT TYPES OF SEMICONDUCTIVITY, ONE OF SAID REGIONS HAVING OHMIC CONTACTS INCLUDED IN SAID CIRCUIT BETWEEN THE OUTPUT OF SAID TRANSISTOR AND SAID UTILIZATION DEVICE, A FEEDBACK CIRCUIT CONNECTED BETWEEN THE OUTPUT SIDE OF SAID ONE REGION AND THE INPUT OF SAID TRIODE TRANSISTOR, A SOURCE OF MODULATING SIGNAL POTENTIAL, A SOURCE OF DIRECT CURRENT BIASING POTENTIAL, CIRCUIT MEANS CONNECTING SAID SOURCE OF MODULATING SIGNAL POTENTIAL AND SAID SOURCE OF DIRECT CURREN BIASING POTENTIAL IN SERIES TO SAID P-N JUNCTION MEANS IN A MANNER TO APPLY A REVERSE BIAS ON SAID P-N JUNCTIONS, WHICH BIAS VARIES IN AMPLITUDE IN ACCORDANCE WITH THE VARIATIONS IN THE MODULATING SIGNAL TO THEREBY SHIFT THE CENTER FREQUENCY OF THE BAND OF FREQUENCIES WHICH IS REGENERATIVELY PASSED THROUGH SAID CIRCUIT MEANS BETWEEN SAID TRANSISTOR MEANS AND SAID UTILIZATION DEVICE TO THEREBY VARY THE TRANSMISSION CHARACTERISTICS OF SAID CIRCUIT FOR THE CARRIER FREQUENCY TO THEREBY AMPLITUDE MODULATE THE AMPLITUDE OF THE CARRIER SIGNAL APPLIED TO SAID UTILIZATION DEVICE.