US3167461A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of preparing degenerately doped semiconductor source material
Assignee: International Business Machines Corp
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Filing: 1960-12-30
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Granted: 1965-01-26
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Expires: 1980-12-30
Abstract
No abstract record available.
Inventors
- 👤 Dinsdale M J Compton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:02
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/053; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/171; H10P32/19; H10D8/70; H10D8/75; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/049; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
106 words
A METHOD OF FORMING ESAKI DIODES BY VAPOR GROWTH, WHICH COMPRISES THE REACTION OF A TRANSPORT ELEMENT WITH A SOURCE OF SEMICONDUCTOR MATERIAL AND THE DECOMPOSITION OF THE PRODUCTS OF THE REACTION TO FORM AN EPITAXIAL CRYSTALLINE GROWTH ON A SUBSTRATE, WHEREIN SUCH METHOD IT IS REQUIRED THAT THE SOURCE MATERIAL BE HOMOGENEOUSLY AND DEGENERATELY DOPED ON THE ORDER OF AT LEAST 1X10**19 A./CC., FURTHER COMPRISING THE PREPARATION OF SAID SOURCE MATERIAL BY THE STEPS OF DIVIDING A QUANTITY OF SAID SEMICONDUCTOR MATERIAL INTO A FINE POWDER AND DIFFUSING AN IMPURITY AGENT INTO SAID FINE POWDER WHEREBY HOMOGENEOUS, DEGENERATE, DOPING OF THE SOURCE MATERIAL IS OBTAINED.
Claim 2
Independent Claim
106 words
A METHOD OF FORMING ESAKI DIODES BY VAPOR GROWTH, WHICH COMPRISES THE REACTION OF A TRANSPORT ELEMENT WITH A SOURCE OF SEMICONDUCTOR MATERIAL AND THE DECOMPOSITION OF THE PRODUCTS OF THE REACTION TO FORM AN EPITAXIAL CRYSTALLINE GROWTH ON A SUBSTRATE, WHEREIN SUCH METHOD IT IS REQUIRED THAT THE SOURCE MATERIAL BE HOMOGENEOUSLY AND DEGENERATELY DOPED ON THE ORDER OF AT LEAST 1X10**19 A./CC., FURTHER COMPRISING THE PREPARATION OF SAID SOURCE MATERIAL BY THE STEPS OF DIVIDING A QUANTITY OF SAID SEMICONDUCTOR MATERIAL INTO A FINE POWDER AND DIFFUSING AN IMPURITY AGENT INTO SAID FINE POWDER WHEREBY HOMOGENEOUS, DEGENERATE, DOPING OF THE SOURCE MATERIAL IS OBTAINED.
References Cited (Backward Citations)
US2921905A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-01-26 | 1968-07-27 | 1969-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-01-26 | 1972-07-27 | 1973-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-01-26 | 1976-07-27 | 1977-01-26 | $7700.00 | Window Closed / Lapsed |