Monolithic semiconductor oscillator

Claim 1

A MONOLITHIC SEMICONDUCTOR DEVICE SUITABLE FOR USE AS A PHASE SHIFT OSCILLATOR COMPRISING: A UNITARY BODY OF SEMICONDUCTIVE MATERIAL OF A BULK MATERIAL HAVING A RESISTIVITY OF A LEAST 50 OHM CEMTIMETERS AND A CARRIER LIFETIME OF AT LEAST 300 MICROSECONDS AND BEING OF A FIRST TYPE SEMICONDUCTIVITY; SAID UNITARY BODY HAVING IN A FIRST PORTION THEREOF A FIRST AND A SECOND IMPURITY DOPED SEMICONDUCTIVE REGION TO FORM WITH SAID BULK MATERIAL THREE SEMICONDUCTIVE REGIONS OF ALTERNATE CONDUCTIVITY TYPE SEPARATED BY P-N JUNCTIONS AND PROVIDING TRANSISTOR FUNCTIONS; A PLURALITY OF OTHER IMPURITY DOPED SEMICONDUCTIVE REGIONS CONTINUOUS AND INTEGRAL WITH ONE OF SAID FIRST AND SECOND REGIONS FOR PROVIDING RESISTANCES TO BIAS SAID TRANSISTOR AREA TO A DESIRED OPERATING POINT UPON APPLICATION TO SUITABLE POTENTIAL THERETO; FIRST AND SECOND ADDITIONAL IMPURITY DOPED SEMICONDUCTIVE REGIONS CONTINUOUS AND INTEGRAL WITH SAID FIRST SEMICONDUCTIVE REGION, SAID FIRST ADDITIONAL REGION OPPOSED ON THE OPPOSITE SURFACE OF SAID UNITARY BODY BY A LOW RESISTANCE PORTION TO FORM AN AREA PROVIDING THE FUNCTION OF A DISTRIBUTED RESISTANCE-CAPACITANCE NETWORK AND SAID SECOND ADDITIONAL REGION OPPOSED ON THE OPPOSITE SURFACE OF SAID UNITARY BODY BY A REGION OF OPPOSITE CONDUCTIVITY TYPE TO PROVIDE A CAPACITIVE FUNCTION UPON THE APPLICATION OF A REVERSE BIAS THERETO.