Film-forming metal capacitors

Claim 1

THE METHOD OF FABRICATING A CAPACITOR WHICH COMPRISES THE STEPS OF PRODUCING A FIRST ELECTRODE BY DEPOSITING A LAYER OF A FILM-FORMING METAL ON A SUBSTRATE BY CONDENSATION, ANODIZING THE SAID FILM-FORMING METAL TO FORM A DIELECTRIC OXIDE FILM THEREOVER, IMMERSING THE ANODIZED FIRST ELECTRODE IN AN ELECTROLYTE HAVING A PH LESS THAN 9, BIASING SAID ANODIZED FIRST ELECTRODE CATHODICALLY, THEREBY CAUSING AN ELECTRIC CURRENT FLOW BETWEEN SAID ELECTROLYTE AND SAID FIRST ELECTRODE IMMERSING SAID ANODIZED FIRST ELECTRODE IN A NONAQUEOUS SOLUTION COMPRISING IONS OF AT LEAST ONE HALOGEN, BIASING SAID ANODIZED FIRST ELECTRODE ANODICALLY, THEREBY CAUSING AN ELECTRIC CURRENT FLOW BETWEEN SAID FIRST ELECTRODE AND SAID NONAQUEOUS SOLUTION, AND CAUSING SAID FILM-FORMING METAL TO GO INTO SOLUTION AT IMPERFECTION SITES, REANODIZING SAID FIRST ELECTRODE AND DEPOSITING A SECOND ELECTRODE SUCH THAT SAID DIELECTRIC OXIDE FILM IS INTERPOSED BETWEEN SAID FIRST AND SAID SECOND ELECTRODES.

Claim 2

THE METHOD OF FABRICATING A CAPACITOR WHICH COMPRISES THE STEPS OF PRODUCING A FIRST ELECTRODE BY DEPOSITING A LAYER OF A FILM-FORMING METAL ON A SUBSTRATE BY CONDENSATION, ANODIZING THE SAID FILM-FORMING METAL TO FORM A DIELECTRIC OXIDE FILM THEREOVER, IMMERSING THE ANODIZED FIRST ELECTRODE IN AN ELECTROLYTE HAVING A PH LESS THAN 9, BIASING SAID ANODIZED FIRST ELECTRODE CATHODICALLY, THEREBY CAUSING AN ELECTRIC CURRENT FLOW BETWEEN SAID ELECTROLYTE AND SAID FIRST ELECTRODE IMMERSING SAID ANODIZED FIRST ELECTRODE IN A NONAQUEOUS SOLUTION COMPRISING IONS OF AT LEAST ONE HALOGEN, BIASING SAID ANODIZED FIRST ELECTRODE ANODICALLY, THEREBY CAUSING AN ELECTRIC CURRENT FLOW BETWEEN SAID FIRST ELECTRODE AND SAID NONAQUEOUS SOLUTION, AND CAUSING SAID FILM-FORMING METAL TO GO INTO SOLUTION AT IMPERFECTION SITES, REANODIZING SAID FIRST ELECTRODE AND DEPOSITING A SECOND ELECTRODE SUCH THAT SAID DIELECTRIC OXIDE FILM IS INTERPOSED BETWEEN SAID FIRST AND SAID SECOND ELECTRODES.