Method of making crystalline mica bodies and product

Claim 1

THE METHOD OF PRRODUCING SUBSTANTIALLY CRYSTALLINE BODIES OF SYNTHETIC MICA HAVING EXCELLENT ELECTRICAL AND MACHINING PROPERTIES COMPRISING MELTING A BATCH CONTAINING THE CONSTITUENTS OF A FLUROPHLOGOPITE MICA PHASE HAVING THE GENERAL FORMULA X0.5-1Y3Z4O10F2, WHEREIN X IS AT LEAST ONE SINGLY OR DOUBLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS GREATER THAN 1.0 SELECTED FROM THE GROUP CONSISTING OF NA+,K+, RB+, AG+, CA2+, SR2+, BA2+, TL2+, AND PB2+, Y IS AT LEAST ONE DOUBLY OR MORE HIGHLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS BETWEEN 0.60 AND 0.90 SELECTED FROM THE GROUP CONSISTING OF MG2+, CU2+, ZN2+, TI4+, ZI4+, SN4+, MO6+, MN66+, CO2+, AND NI2+, AND Z REPRESENTS A COMBINATION OF SILICON AND A HIGHLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS LESS THAN 0.6 SELECTED FROM THE GROUP CONSISTING OF AL3+ AND B3+ IN A MOLE RATIO OF 3:1, SAID CONSTITUENTS BEING PRESENT IN SUCH PROPORTION THAT SAID MELT IS STOICHIOMETRICALLY EQUIVALENT TO AT LEAST ABOUT 90% BY WEIGHT OF SAID FLUOROPHLOGOPITE PHASE, AND AS NUCLEATING AGENT ABOUT 0.210% BY WEIGHT OF CHROMIUM OXIDE, PASSING THE MOLTEN BATCH TO FORMING MEANS, THE SURFACE OF WHICH IS HEATCONDUCTIVE, SO AS TO SIMULTANEOUSLY FORM THE MOLTEN BATCH INTO THE DESIRED SHAPE AND RAPIDLY CHILL THE SURFACE OF SAID SHAPE TO A TEMPERATURE AT LEAST BELOW THE SOFTENING POINT OF THE MELT, MAINTAINING THEREAT FOR ABOUT 10 TO 60 SECONDS TO DEVELOP A GALSS SURFACE LAYER THEREON BUT RETAINING THE INTERIOR IN THE MOLTEN STATE, AND THEREAFTER IMMEDIATELY REMOVING SAID SHAPE FROM THE FORMING MEANS AND ANNEALING SAID SHAPE TO CAUSE FLUROPHOLGOPITE MICA CRYSTALS TO GROW PERPENDICULARLY FROM THE SURFACE LAYER INWARD.

Claim 2

THE METHOD OF PRRODUCING SUBSTANTIALLY CRYSTALLINE BODIES OF SYNTHETIC MICA HAVING EXCELLENT ELECTRICAL AND MACHINING PROPERTIES COMPRISING MELTING A BATCH CONTAINING THE CONSTITUENTS OF A FLUROPHLOGOPITE MICA PHASE HAVING THE GENERAL FORMULA X0.5-1Y3Z4O10F2, WHEREIN X IS AT LEAST ONE SINGLY OR DOUBLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS GREATER THAN 1.0 SELECTED FROM THE GROUP CONSISTING OF NA+,K+, RB+, AG+, CA2+, SR2+, BA2+, TL2+, AND PB2+, Y IS AT LEAST ONE DOUBLY OR MORE HIGHLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS BETWEEN 0.60 AND 0.90 SELECTED FROM THE GROUP CONSISTING OF MG2+, CU2+, ZN2+, TI4+, ZI4+, SN4+, MO6+, MN66+, CO2+, AND NI2+, AND Z REPRESENTS A COMBINATION OF SILICON AND A HIGHLY CHARGED POSITIVE ION HAVING AN IONIC RADIUS LESS THAN 0.6 SELECTED FROM THE GROUP CONSISTING OF AL3+ AND B3+ IN A MOLE RATIO OF 3:1, SAID CONSTITUENTS BEING PRESENT IN SUCH PROPORTION THAT SAID MELT IS STOICHIOMETRICALLY EQUIVALENT TO AT LEAST ABOUT 90% BY WEIGHT OF SAID FLUOROPHLOGOPITE PHASE, AND AS NUCLEATING AGENT ABOUT 0.210% BY WEIGHT OF CHROMIUM OXIDE, PASSING THE MOLTEN BATCH TO FORMING MEANS, THE SURFACE OF WHICH IS HEATCONDUCTIVE, SO AS TO SIMULTANEOUSLY FORM THE MOLTEN BATCH INTO THE DESIRED SHAPE AND RAPIDLY CHILL THE SURFACE OF SAID SHAPE TO A TEMPERATURE AT LEAST BELOW THE SOFTENING POINT OF THE MELT, MAINTAINING THEREAT FOR ABOUT 10 TO 60 SECONDS TO DEVELOP A GALSS SURFACE LAYER THEREON BUT RETAINING THE INTERIOR IN THE MOLTEN STATE, AND THEREAFTER IMMEDIATELY REMOVING SAID SHAPE FROM THE FORMING MEANS AND ANNEALING SAID SHAPE TO CAUSE FLUROPHOLGOPITE MICA CRYSTALS TO GROW PERPENDICULARLY FROM THE SURFACE LAYER INWARD.