Transistorized negative resistance networks

Claim 1

A TWO TERMINAL NETWORK COMPRISING A SEMICONDUCTOR ARRANGEMENT EXHIBITING CURRENT AMPLIFICATION HAVING A CURRENT INJECTING ELECTRODE, A CONTROL ELECTRODE, A FLOATING ELECTRODE AND A CURRENT EJECTING ELECTRODE, A FIRST TERMINAL OF SAID NETWORK CONNECTED TO SAID CURRENT INJECTING ELECTRODE, A SERIES CONNECTION OF A SOURCE OF POTENTIAL AND IMPEDANCE MEANS CONNECTED BETWEEN SAID CONTROL ELECTRODE AND SAID CURRENT EJECTING ELECTRODE, A SECOND TERMINAL OF SAID NETWORK CONNECTED TO A FIRST POINT ON SAID SERIES CONNECTION, SO THAT SAID NETWORK PROVIDES A NEGATIVE RESISTANCE CHARACTERISTIC IN RESPONSE TO ENERGY APPLIED TO SAID TERMINALS, AN EXTERNAL CURRENT PATH INCLUDING A NONLINEAR RESISTIVE ELEMENT COUPLED BETWEEN SAID FLOATING ELECTRODE AND A SECOND POINT ON SAID SERIES CONNECTION FOR SHUNTING INCREASING AMOUNTS OF CURRENT AWAY FROM SAID FLOATING ELECTRODE IN ACCORDANCE WITH THE VOLTAGE ACROSS SAID ELEMENT WHEREBY THE NEGATIVE RESISTANCE VALUE OF SAID CHARACTERISTIC IS CONTROLLED BY SAID CURRENT PATH.