US3137587A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for the manufacture of semiconductor film-type hall generators
Assignee: Individual
•
Filing: 1961-11-07
•
Granted: 1964-06-16
•
Expires: 1981-11-07
Abstract
No abstract record available.
Inventors
- 👤 Harry H Wieder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:16
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/01
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
111 words
THE FABRICATION OF SEMICONDUCTOR FILMS FOR HALL EFFECT GENERATORS COMPRISING: (A) CUTTING A SLAB OF HIGH PERMEABILITY FERRITE AND GRINDING AND POLISHING A SURFACE AREA OF SAID FERRITE SLAB INTO AN OPTICALLY FLAT PLATE, AND SCRUPULOUSLY CLEANING SAID SURFACE. (B) PLACING A SCRUPULOUSLY CLEANED GRAIN OF SEMICONDUCTOR MATERIAL ONTEH OPTICALLY FLAT SURFACE OF SAID FERRITE SLAB, (C) PLACING SAID FERRITE SLAB WITH GRAIN OF SEMICONDUCTOR MATERIAL THEREON WITHIN AN ENCLOSURE HAVING AN INERT ATMOSPHERE, (D) RAISING THE TEMPERATURE JOF SAID FERRITE SLAB SUFFICIENTLY TO LIQUIDFY SAID GRAIN OF SEMICONDUCTOR, AND MAINTAINING WITHIN SAID ENCLOSURE AN AMBIENT TEMPERATURE AT APPROXIMATELY HALF MEASURED IN CENTIGRADE THAT REQUIRED TO LIQUIDFY SAID GRAIN OF SEMICONDUCTOR,
Claim 2
Dependent Claim
111 words
THE FABRICATION OF SEMICONDUCTOR FILMS FOR HALL EFFECT GENERATORS COMPRISING: (A) CUTTING A SLAB OF HIGH PERMEABILITY FERRITE AND GRINDING AND POLISHING A SURFACE AREA OF SAID FERRITE SLAB INTO AN OPTICALLY FLAT PLATE, AND SCRUPULOUSLY CLEANING SAID SURFACE. (B) PLACING A SCRUPULOUSLY CLEANED GRAIN OF SEMICONDUCTOR MATERIAL ONTEH OPTICALLY FLAT SURFACE OF SAID FERRITE SLAB, (C) PLACING SAID FERRITE SLAB WITH GRAIN OF SEMICONDUCTOR MATERIAL THEREON WITHIN AN ENCLOSURE HAVING AN INERT ATMOSPHERE, (D) RAISING THE TEMPERATURE JOF SAID FERRITE SLAB SUFFICIENTLY TO LIQUIDFY SAID GRAIN OF SEMICONDUCTOR, AND MAINTAINING WITHIN SAID ENCLOSURE AN AMBIENT TEMPERATURE AT APPROXIMATELY HALF MEASURED IN CENTIGRADE THAT REQUIRED TO LIQUIDFY SAID GRAIN OF SEMICONDUCTOR,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-06-16 | 1967-12-16 | 1968-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-06-16 | 1971-12-16 | 1972-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-06-16 | 1975-12-16 | 1976-06-16 | $7700.00 | Window Closed / Lapsed |