Composite field effect transistor

Claim 1

IN SEMICONDUCTOR MEANS, AN ELONGATED BODY OF MATERIAL HAVING ENERGY GAP CHARACTERISTICS SUFFICIENTLY HIGH TO PRECLUDE THERMAL GENERATION OF CARRIERS SAID BODY INCLUDING TWO ENDS AND AT LEAST TWO FACES INTERCONNECTING SAID ENDS, AN OHMIC CONTACT AREA ON EACH END, A CENTRAL OHMIC CONTACT SECURED TO AND EXTENDING TRANSVERSELY ACROSS AT LEAST ONE OF SAID FACES AT A POINT INTERMEDIATE THE ENDS, A PAIR OF RECTIFYING BARRIERS FORMED BY IMPURITY CONCENTRATION SURFACE AREAS SECURED TO AND EXTENDING TRANSVERSELY ACROSS SAID ONE FACE OF THE BODY, ONE BETWEEN EACH END AND THE CENTRAL OHMIC CONTACT AREA FORMING TWO TRANSISTOR SECTIONS IN SERIES, SAID OHMIC CONTACT AREAS FORMING SOURCE AND DRAIN ELECTRODES FOR THE TWO TRANSISTOR SECTIONS AND THE RECTIFYING BARRIER CONTACTS FORMING GATE ELECTRODES FOR THE SAME, SAID CENTRAL OHMIC CONTACT AREA FORMING A COMMON DRAIN CONTACT FOR ONE AND SOURCE CONTACT FOR THE OTHER TRANSISTOR SECTION, AN INPUT CIRCUIT CONNECTED TO ONE END OHMIC CONTACT AREA AND TO ONE RECTIFYING BARRIER CONTACT, AN OUTPUT CIRCUIT CONNECTED TO THE SAME END OHMIC CONTACT AREA AND TO THE CENTRAL OHMIC CONTACT AREA, AND A CONDUCTIVE CONNECTION BETWEEN THE CENTRAL OHMIC CONTACT AREA AND THE SECOND BARRIER CONTACT TO FORM A FIRST AMPLIFYING FIELD EFFECT TRANSISTOR AND A MATCHING IMPEDANCE LOAD IN SERIES THEREWITH AS A UNITARY BODY.