US3125532A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of doping semiconductor
Assignee: —
•
Filing: —
•
Granted: 1964-03-17
•
Expires: 1981-03-17
Abstract
No abstract record available.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:43
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/08; C30B13/10; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
48 words
A METHOD FOR DOPING SEMICONDUCTOR SILICON, FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING FUXING A VITREOUS MATERIAL COMPRISING A DOPING SUBSTANCE, TO A SEMICONDUCTOR SILICON ROD, AND SUBSEQUENTLY SUBJECTING THE ROD TO A CRUCIBLE FREE FLOATING ZONE MELTING CAUSING A MOLTEN ZONE TO BE DISPLACED LENGTHWIDE OF THE ROD.
Claim 2
Independent Claim
48 words
A METHOD FOR DOPING SEMICONDUCTOR SILICON, FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING FUXING A VITREOUS MATERIAL COMPRISING A DOPING SUBSTANCE, TO A SEMICONDUCTOR SILICON ROD, AND SUBSEQUENTLY SUBJECTING THE ROD TO A CRUCIBLE FREE FLOATING ZONE MELTING CAUSING A MOLTEN ZONE TO BE DISPLACED LENGTHWIDE OF THE ROD.
References Cited (Backward Citations)
US2739088A
Cited
US2794846A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-03-17 | 1967-09-16 | 1968-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-03-17 | 1971-09-16 | 1972-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-03-17 | 1975-09-16 | 1976-03-17 | $7700.00 | Window Closed / Lapsed |