US3124686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Goorissen
Assignee: —
•
Filing: —
•
Granted: 1964-03-10
•
Expires: 1981-03-10
Abstract
No abstract record available.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:16
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/52; C22; C22F; C22F1/00; C22F1/16; C30; C30B; C30B13/00; C30B13/28; C30B13/30; C30B15/00; C30B15/20; C30B15/22; C30B15/26; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1004; Y10T117/1008; Y10T117/1024; Y10T117/1076; Y10T117/1088
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
124 words
A METHOD OF TREATING SEMICONDUCTOR MATERIAL WITHIN AN ENCLOSURE CONTAINING A PORTION SUBSTANTIALLY TRANSPARENT TO INFRA-RED RADIATION AND CONTROLLING THE SAID TREATMENT, COMPRISING THE STEPS OF HEATING THE SEMICONDUCTOR MATERIAL AS PART OF THE TREATMENT UNDER CONDITIONS AT WHICH SEMICONDUCTOR VAPORS ARE FORMED THAT CONDENSE ON THE SUBSTANTIALLY TRANSPARENT ENCLOSURE PORTION FORMING LAYER THAT IS SUBSTANTIALLY OPAQUE TO VISIBLE RADIATION BUT SUBSTANTIALLY TRANSPARENT TO INFRA-RED RADIATION, AND UTILIZING AN INFRA-RED IMAGE CONVERTER LOCATED OUTSIDE THE ENCLOSURE FOR DETECTING THROUGH THE SAID SUBSTANTIALLY TRANSPARENT ENCLOSURE PORTION AND LAYER AN INFRA-RED IMAGE OF THE HEATED SEMICONDUCTOR MATERIAL AND FOR CONVERTING THAT INFRA-RED IMAGE INTO A VISIBLE IMAGE OF THE HEATED SEMICONDUCTOR MATERIAL WHICH CAN BE OBSERVED FOR THE PURPOSE OF CONTROLLING THE TREATMENT OF THE MATERIAL.
Claim 2
Independent Claim
124 words
A METHOD OF TREATING SEMICONDUCTOR MATERIAL WITHIN AN ENCLOSURE CONTAINING A PORTION SUBSTANTIALLY TRANSPARENT TO INFRA-RED RADIATION AND CONTROLLING THE SAID TREATMENT, COMPRISING THE STEPS OF HEATING THE SEMICONDUCTOR MATERIAL AS PART OF THE TREATMENT UNDER CONDITIONS AT WHICH SEMICONDUCTOR VAPORS ARE FORMED THAT CONDENSE ON THE SUBSTANTIALLY TRANSPARENT ENCLOSURE PORTION FORMING LAYER THAT IS SUBSTANTIALLY OPAQUE TO VISIBLE RADIATION BUT SUBSTANTIALLY TRANSPARENT TO INFRA-RED RADIATION, AND UTILIZING AN INFRA-RED IMAGE CONVERTER LOCATED OUTSIDE THE ENCLOSURE FOR DETECTING THROUGH THE SAID SUBSTANTIALLY TRANSPARENT ENCLOSURE PORTION AND LAYER AN INFRA-RED IMAGE OF THE HEATED SEMICONDUCTOR MATERIAL AND FOR CONVERTING THAT INFRA-RED IMAGE INTO A VISIBLE IMAGE OF THE HEATED SEMICONDUCTOR MATERIAL WHICH CAN BE OBSERVED FOR THE PURPOSE OF CONTROLLING THE TREATMENT OF THE MATERIAL.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-03-10 | 1967-09-09 | 1968-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-03-10 | 1971-09-09 | 1972-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-03-10 | 1975-09-09 | 1976-03-10 | $7700.00 | Window Closed / Lapsed |