Polycrystalline article and method for making same

Claim 1

IN A METHOD OF MAKING WAFERS OF SEICONDUCTOR MATERIAL HAVING A WIDTH AND LENGTH MUCH GREATER THAT THE THICKNESS THEREOF AND METAL-COATED ON OPPOSITE ENDS BUT NOT ON THE FACES, AND HAVING THE CRYSTALLINE GRAIN STRUCTURE EXTENDING LENGTHWISE THEREOF, FORM AN ELONGATED FLATTENED ROD OF SEMICONDUCTOR MATERIAL HAVING THE CRYSTALLINE GRAIN STRUCTURE EXTENDING LENGTHWISE THEREOF, AND HAVING A WIDTH ACROSS THE FLATS EQUAL TO THE DESIRED WIDTH OF THE WAFERS AND A LENGTH EQUAL TO THE DESIRED LENGTH OF THE WAFERS, SAID METHOD COMPRISING THE STEPS OF: (A) SECURING SAID ROD OF SEMICONDUCTOR MATERIAL RIGIDLY INTO A FLAT GROOVE IN AN ELONGATED SUPPORTING HOLDER WITH ONE FLAT SIDE IN THE BOTTOM OF THE GROOVE AND THE OTHER FLAT SIDE SUBSTANTIALLY FLUSH WITH THE TOP OF THE HOLDER BY SURROUNDING SAID ROD WITH A SOLUBLE POTTING MATERIAL WHICH SETS UP HARD; (B) REINFORCING THE CRYSTALLINE GRAIN STRUCTURE OF SAID SEMICONDUCTOR MATERIAL BY COATING THE EXPOSED ENDS OF SAID SEMICONDUCTOR MATERIAL WITH METAL;