US3091849A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of bonding materials
Assignee: Pacific Semiconductors Inc
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Filing: 1959-09-14
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Granted: 1963-06-04
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Expires: 1979-09-14
Abstract
No abstract record available.
Inventors
- 👤 Cohen Jerrold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:53
CPC Classifications
H; H01; H01R; H01R43/00; H01R43/02; H01C; H01C1/00; H01C1/14; H01C1/144; H10; H10D; H10D10/00; H10P; H10P95/00; H10W; H10W72/00; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07541; H10W72/50; H10W72/531; H10W72/533; H10W72/534; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/754; Y; Y10; Y10S; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
90 words
A METHOD OF THERMO-COMPRESSION BONDING A GOLDMETAL ELECTRODE TO A SILICON SEMICONDUCTOR CRYSTAL BODY INCLUDING THE STEPS OF:PLACING THE ELECTRODE IN PREDETERMINED PRESSURE CONTACT WITH THE SEMICONDUCTOR BODY; MAINTAINING THE CONTACT AREA IN A REDUCING ATMOSPHERE BY INTRODUCING A REDUCING GAS CONSISTING ESSENTIALLY OF A NONOXIDIZING COMPOUND OF FLUORINE WHICH WILL REACT WITH SILICON DIOXIDE TO PRODUCE A VOLATILE COMPOUND OF SILICON WITHOUT ATTACKING ELEMENTAL SILICON OVER THE CONTACT AREA; AND HEATING SAID BODY TO A TEMPERATURE IN THE RANGE FROM 320*C.,TO 360*C, FOR FROM TEN SECONDS TO 3 MINUTES.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-06-03 | 1966-12-03 | 1967-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-06-03 | 1970-12-03 | 1971-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-06-03 | 1974-12-03 | 1975-06-04 | $7700.00 | Window Closed / Lapsed |