US3088883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrophotographic system
Assignee: Motorola Solutions Inc
•
Filing: 1958-01-14
•
Granted: 1963-05-07
•
Expires: 1978-01-14
Abstract
No abstract record available.
Inventors
- 👤 Robillard Jean Jules Achille
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:34
CPC Classifications
G; G03; G03G; G03G17/00; G03G17/02
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
IN AN ELECTROPHOTOGRAPBIC MULTILARY STRUCTURE HAVING ELECTRODES ON OPPOSITE SIDES THEREOF, WITH ONE OF SAID ELECTRODES BEING TRANSPARENT T PERMIT EXPOSURE OF PHOTOCONDUCTIVE MATERIAL IN SAID STRUCTURE TO LIGHT, THE COMBINATION WITH SAID ELECTRODES OF A LAYER OF PHOTOCONDUCTIVE MATERIAL IN CONTACT WITH AN AREA OF SAID TRANSPARENT ELECTRODE, A THIN FILM OF COPPER IN CONTACT WITH SAID PHOTOCONDUCTIVE LAYER, WITH SAID COPPER FILM BEING SUBSTANTIALLY UNIFORM IN THICKNESS AND BEING SUFFICIENTLY THIN TO RELEASE COPPER IONS THEREFROM WHEN SAID STRUCTURE IS ELECTRICALLY ENERGIZED, SAID PHOTOCONDUCTIVE LAYER BEING F ADAPTED TO AREALLY MODULATE THE FLOW OF COPPER IONS FROM SAID FILM, A BARRIER LAYER IN CONTACT WITH SAID COPPER FILM OF A DIELECTRIC MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON DIOXIDE AND TITANIUM DIOXIDE, SAID BARRIER LAYER BEING SUFFICIENTLY THIN TO ALLOW COPPER IONS TO
Claim 2
Dependent Claim
136 words
IN AN ELECTROPHOTOGRAPBIC MULTILARY STRUCTURE HAVING ELECTRODES ON OPPOSITE SIDES THEREOF, WITH ONE OF SAID ELECTRODES BEING TRANSPARENT T PERMIT EXPOSURE OF PHOTOCONDUCTIVE MATERIAL IN SAID STRUCTURE TO LIGHT, THE COMBINATION WITH SAID ELECTRODES OF A LAYER OF PHOTOCONDUCTIVE MATERIAL IN CONTACT WITH AN AREA OF SAID TRANSPARENT ELECTRODE, A THIN FILM OF COPPER IN CONTACT WITH SAID PHOTOCONDUCTIVE LAYER, WITH SAID COPPER FILM BEING SUBSTANTIALLY UNIFORM IN THICKNESS AND BEING SUFFICIENTLY THIN TO RELEASE COPPER IONS THEREFROM WHEN SAID STRUCTURE IS ELECTRICALLY ENERGIZED, SAID PHOTOCONDUCTIVE LAYER BEING F ADAPTED TO AREALLY MODULATE THE FLOW OF COPPER IONS FROM SAID FILM, A BARRIER LAYER IN CONTACT WITH SAID COPPER FILM OF A DIELECTRIC MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON DIOXIDE AND TITANIUM DIOXIDE, SAID BARRIER LAYER BEING SUFFICIENTLY THIN TO ALLOW COPPER IONS TO
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-05-06 | 1966-11-05 | 1967-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-05-06 | 1970-11-05 | 1971-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-05-06 | 1974-11-05 | 1975-05-07 | $7700.00 | Window Closed / Lapsed |