Method and means for growing and treating crystals

Claim 1

APPARATUS FOR GROWING CRYSTALS FROM A GIVEN MATERIAL WHICH IS CONDUCTIVE AT A TEMPERATURE BELOW ITS MELTING POINT AND WHICH UPON SOLIDIFICATION FROM A MELTED PHASE IS CAPABLE OF FORMING A CRYSTALLINE STRUCTURE COMPRISING: AN ATMOSPHERE CONTROLLED ENCLOSURE; A MOVABLE PEDESTAL DISPOSED TO EXTEND INTO SAID ENCLOSURE ALONG THE LONGITUDINAL AXIS THEREOF; A CRYSTAL SEED OF SAID MATERIAL SECURED TO THE END OF SAID PEDESTAL WITHIN SAID ENCLOSURE; A FIRST HIGH FREQUENCY INDUCTION HEATING COIL HAVING A TRUNCATED CONICAL CONFIGURATION DISPOSED IN SAID ENCLOSURE COAXIAL OF SAID LONGITUDINAL AXIS HAVING THE SMALLER DIAMETER THEREOF ABOVE AND IN JUXTAPOSITION TO THE TIP OF SAID CRYSTAL SEED; A FIELD CONCENTRATOR HAVING A TRUNCATED CONICAL CONFIGURATION DISPOSED IN SAID ENCLOSURE CONCENTRIC OF AND SUBSTANTIALLY COEXTENSIVE WITH SAID FIRST COIL HAVING ONLY THE SMALLER DIAMETER END THEREOF IN ELECTRICAL CONTACT WITH THE SMALLEST DIAMETER TURN OF SAID FIRST COIL TO CONCENTRATE THE HIGH FREQUENCY FIELD OF SAID FIRST COIL IN THE TIP OF SAID CRYSTAL SEED TO MELT THE TIP OF SAID CRYSTAL SEED AND LEAVE THE REMAINDER OF SAID CRYSTAL SEED IN A SOLID STATE;