US3085055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating transistor devices
Assignee: Lanteris Space LLC
•
Filing: 1957-09-12
•
Granted: 1963-04-09
•
Expires: 1977-09-12
Abstract
No abstract record available.
Inventors
- 👤 William E Bradley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:54
CPC Classifications
C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
THE METHOD OF PROVIDING A REGION OF CONTROLLABLY REUDCED THICKNESS IN A BODY OF SEMICONDUCTIVE MATERIAL, COMPRISING THE STEPS OF DIRECTING A JET OF AN ELECTROLYIC ETCHANT AGAINST A FIRST SURFACE REGION OF SAID BODY, APPLYING AN ETCHING POTENTIAL BETWEEN SAID JET AND A SECOND SURFACE REGION OF SAID BODY TO PRODUCE PROGRESSIVE ETCHING OF A DEPRESSION IN SAID BODY, FORMING A RECTIFYING CONTACT TO A THIRD SURFACE REGION OF SAID BODY OPPOSITE SAID FIRST SURFACE REGON, APPLYING A REVERSE-BIAS TO SAID RECTIFYING CONTACT DURING SAID ETCHING TO PRODUCE A DEPLETION REGION IN THE PATH OF SAID PROGRESSIVE ETCHING, AND CONTINUIN SAID DIRECTING OF SAID JET AND SAID APPLYING OF SAID ETCHING POTENTIAL AND SAID REVERSE BIAS UUNTIL A SURFACE REGION OF SAID DEPRESSION SUBSTANTIALLY REACHES SAID DEPLETION REGION.
Claim 2
Independent Claim
129 words
THE METHOD OF PROVIDING A REGION OF CONTROLLABLY REUDCED THICKNESS IN A BODY OF SEMICONDUCTIVE MATERIAL, COMPRISING THE STEPS OF DIRECTING A JET OF AN ELECTROLYIC ETCHANT AGAINST A FIRST SURFACE REGION OF SAID BODY, APPLYING AN ETCHING POTENTIAL BETWEEN SAID JET AND A SECOND SURFACE REGION OF SAID BODY TO PRODUCE PROGRESSIVE ETCHING OF A DEPRESSION IN SAID BODY, FORMING A RECTIFYING CONTACT TO A THIRD SURFACE REGION OF SAID BODY OPPOSITE SAID FIRST SURFACE REGON, APPLYING A REVERSE-BIAS TO SAID RECTIFYING CONTACT DURING SAID ETCHING TO PRODUCE A DEPLETION REGION IN THE PATH OF SAID PROGRESSIVE ETCHING, AND CONTINUIN SAID DIRECTING OF SAID JET AND SAID APPLYING OF SAID ETCHING POTENTIAL AND SAID REVERSE BIAS UUNTIL A SURFACE REGION OF SAID DEPRESSION SUBSTANTIALLY REACHES SAID DEPLETION REGION.
References Cited (Backward Citations)
US2656496A
Cited
US2695930A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-04-08 | 1966-10-08 | 1967-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-04-08 | 1970-10-08 | 1971-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-04-08 | 1974-10-08 | 1975-04-09 | $7700.00 | Window Closed / Lapsed |