US3075903A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of electrolytically etching a semiconductor element
Assignee: Motorola Solutions Inc
•
Filing: 1960-02-23
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Granted: 1963-01-29
•
Expires: 1980-02-23
Abstract
No abstract record available.
Inventors
- 👤 Costa Harry Da
- 👤 Carl H Knowles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:05
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
A METHOD OF ETCHING A SEMICONDUCTOR ELEMENT HAVING A CONTACT ON A SURFACE THEREOF AND A JUNCTION BENEATH SAID SURFACE TO FORM A MESA AT SAID CONTACT WHICH INCLUDES A PORTION OF SAID JUNCTION, SAID METHOD INCLUDING THE STEPS OF: (A) ESTABLISHING AND MAINTAINING SAID SEMICONDUCTOR ELEMENT AND AN ETCHING NOZZLE IN STATIONARY POSITIONS WHEREIN A HOLLOW TIP OF SAID NOZZLE EXTENDS ABOUT SAID CONTACT AND IS CLOSELY SPACED FROM AND PARALLEL TO SAID SURFACE OF SAID SEMICONDUCTOR ELEMENT, THEREBY FORMING A NARROW GAP FOR GAS TO ESCAPE RADIALLY OUTWARD FROM SAID NOZZLE AT SAID SURFACE, (B) PASSING A FLOWING STREAM OF LIQUID ELECTRLYTE OVER THE EXTERIOR OF SAID NOZZLE TIP ON TO AN AREA OF SAID SEMICONDUCTOR ELEMENT SURROUNDING SAID CONTACT,
Claim 2
Independent Claim
122 words
A METHOD OF ETCHING A SEMICONDUCTOR ELEMENT HAVING A CONTACT ON A SURFACE THEREOF AND A JUNCTION BENEATH SAID SURFACE TO FORM A MESA AT SAID CONTACT WHICH INCLUDES A PORTION OF SAID JUNCTION, SAID METHOD INCLUDING THE STEPS OF: (A) ESTABLISHING AND MAINTAINING SAID SEMICONDUCTOR ELEMENT AND AN ETCHING NOZZLE IN STATIONARY POSITIONS WHEREIN A HOLLOW TIP OF SAID NOZZLE EXTENDS ABOUT SAID CONTACT AND IS CLOSELY SPACED FROM AND PARALLEL TO SAID SURFACE OF SAID SEMICONDUCTOR ELEMENT, THEREBY FORMING A NARROW GAP FOR GAS TO ESCAPE RADIALLY OUTWARD FROM SAID NOZZLE AT SAID SURFACE, (B) PASSING A FLOWING STREAM OF LIQUID ELECTRLYTE OVER THE EXTERIOR OF SAID NOZZLE TIP ON TO AN AREA OF SAID SEMICONDUCTOR ELEMENT SURROUNDING SAID CONTACT,
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-01-28 | 1966-07-30 | 1967-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-01-28 | 1970-07-30 | 1971-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-01-28 | 1974-07-30 | 1975-01-29 | $7700.00 | Window Closed / Lapsed |