US3015591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semi-conductor rectifiers and method of manufacture
Assignee: TDK Micronas GmbH
•
Filing: 1958-07-18
•
Granted: 1962-01-02
•
Expires: 1978-07-18
Abstract
No abstract record available.
Inventors
- 👤 Edwin A Zaratkiewicz
- 👤 Edward J Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:36
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D99/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
63 words
IN THE METHOD OF MAKING A SILICON RECTIFIER DEVICE THE STEPS COMPRISING HEAT-TREATING SILICON AT AN ELEVATED TEMPERATURE BELOW THE MELTING POINT OF SILICON IN A HYDROGEN ATMOSPHERE SUFFICIENT TO REMOVE IMPURITIES FROM SAID SILICON, SELECTING AN IMPURITY FROM THE GROUP CONSISTING OF BORON, ALUMIUM, GALLIUM, INDIUM, TELLURIUM, PHOSPHOROUS, ANTIMONY, ARSENIC AND BISMUTH, ALLOYING SAID IMPURITY WITH SAID SILICON AT A GIVEN TEMPERATURE
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-01-01 | 1965-07-03 | 1966-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-01-01 | 1969-07-03 | 1970-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-01-01 | 1973-07-03 | 1974-01-02 | $7700.00 | Window Closed / Lapsed |