Method of making transistors

Claim 1

A METHOD OF MAKING A JUNCTION SEMICONDUCTOR DEVICE WHICH METHOD INCLUDES THE STEPS OF PLACING A DOPED METAL LAYER BETWEEN AND IN CONTACT WITH A PAIR OF SEMICONDUCTOR LAYERS OF PREDETERMINED CONDUCTIVITY TYPE TO FORM A SANDWICH, SAID DOPED METAL BEING SILVER DOPED WITH MATERIALS SELECTED FROM THE GROUP CONSISTING OF (A) P-TYPE AND N-TYPE IMPURITIES WITH ONE TYPE HAVING GREATER SEGREGATION PROPERTIES THAN THE OTHER AND WITH SAID OTHER TYPE OF IMPURITY CAPABLE OF DIFFUSING INTO AN ADJACENT SEMICONDUCTOR BODY MORE RAPIDLY THAN SAID ONE TYPE AND (B) INDIUM IMPURITY DOPED WITH AN N-TYPE IMPURITY, SAID IMPURITY FOR INDIUM HAVING DIFFERENT SEGREGATION PROPERTIES THAN SAID INDIUM AND WITH THE IMPURITY HAVING LESSER SEGREGATION PROPERTIES CAPABLE OF DIFFUSING INTO A SEMICONDUCTIVE BODY MORE RAPIDLY THAN THE IMPURITY HAVING GREATER SEGREGATION PROPERTIES THEREIN, SUBJECTING TOP AND BOTTOM SURFACES OF SAID SANDWICH TO DIFFERENT TEMPERATURES TO ESTABLISH A TEMPERATURE GRADIENT ACROSS SAID SANDWICH WITH THE INTERNAL TEMPERATURES THEREOF BEING ABOVE THE MELTING POINT OF SAID DOPED METAL BUT BELOW THE MELTING POINT OF SAID SEMICONDUCTOR LAYERS, MAINTAINING SAID TEMPERATURE GRADIENT ACROSS SAID SANDWICH WHILE SAID METAL MIGRATES TOWARD ONE OF SAID SEMICONDUCTOR LAYERS AND THE P-TYPE AND N-TYPE IMPURITY IN SAID METAL ARE FIRST SEGREGATED IN A LAYER ADJACENT THE OTHER OF SAID LAYERS WITH ONE TYPE OF SAID IMPURITY PREDOMINATING THEREIN DUE TO THE DIFFERENCE IN SEGREGATION COEFFICIENTS AND THEREAFTER THE OTHER TYPE OF SAID IMPURITY DIFFUSES A GREATER DISTANCE INTO THE OTHER OF SAID LAYERS, AND COOLING SAID SANDWICH TO ALLOW THE REGROWTH OF A RECTIFYING JUNCTION BETWEEN SAID LAYERS.

Claim 2

A METHOD OF MAKING A JUNCTION SEMICONDUCTOR DEVICE WHICH METHOD INCLUDES THE STEPS OF PLACING A DOPED METAL LAYER BETWEEN AND IN CONTACT WITH A PAIR OF SEMICONDUCTOR LAYERS OF PREDETERMINED CONDUCTIVITY TYPE TO FORM A SANDWICH, SAID DOPED METAL BEING SILVER DOPED WITH MATERIALS SELECTED FROM THE GROUP CONSISTING OF (A) P-TYPE AND N-TYPE IMPURITIES WITH ONE TYPE HAVING GREATER SEGREGATION PROPERTIES THAN THE OTHER AND WITH SAID OTHER TYPE OF IMPURITY CAPABLE OF DIFFUSING INTO AN ADJACENT SEMICONDUCTOR BODY MORE RAPIDLY THAN SAID ONE TYPE AND (B) INDIUM IMPURITY DOPED WITH AN N-TYPE IMPURITY, SAID IMPURITY FOR INDIUM HAVING DIFFERENT SEGREGATION PROPERTIES THAN SAID INDIUM AND WITH THE IMPURITY HAVING LESSER SEGREGATION PROPERTIES CAPABLE OF DIFFUSING INTO A SEMICONDUCTIVE BODY MORE RAPIDLY THAN THE IMPURITY HAVING GREATER SEGREGATION PROPERTIES THEREIN, SUBJECTING TOP AND BOTTOM SURFACES OF SAID SANDWICH TO DIFFERENT TEMPERATURES TO ESTABLISH A TEMPERATURE GRADIENT ACROSS SAID SANDWICH WITH THE INTERNAL TEMPERATURES THEREOF BEING ABOVE THE MELTING POINT OF SAID DOPED METAL BUT BELOW THE MELTING POINT OF SAID SEMICONDUCTOR LAYERS, MAINTAINING SAID TEMPERATURE GRADIENT ACROSS SAID SANDWICH WHILE SAID METAL MIGRATES TOWARD ONE OF SAID SEMICONDUCTOR LAYERS AND THE P-TYPE AND N-TYPE IMPURITY IN SAID METAL ARE FIRST SEGREGATED IN A LAYER ADJACENT THE OTHER OF SAID LAYERS WITH ONE TYPE OF SAID IMPURITY PREDOMINATING THEREIN DUE TO THE DIFFERENCE IN SEGREGATION COEFFICIENTS AND THEREAFTER THE OTHER TYPE OF SAID IMPURITY DIFFUSES A GREATER DISTANCE INTO THE OTHER OF SAID LAYERS, AND COOLING SAID SANDWICH TO ALLOW THE REGROWTH OF A RECTIFYING JUNCTION BETWEEN SAID LAYERS.