US2995475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices
Assignee: AT&T Inc
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Filing: 1958-11-04
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Granted: 1961-08-08
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Expires: 1978-11-04
Abstract
No abstract record available.
Inventors
- 👤 William M Sharpless
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/938; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49014; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12681; Y10T428/12708
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
63 words
THE METHOD OF FABRICATING A LOW RESISTANCE CONTACT TO A BODY OF N-TYPE GALLIUM ARSENIDE MATERIAL WHICH COMPRISES HEATING SAID BODY TO A TEMPERATURE BETWEEN 100 TO 150*C., DEPOSITING A LAYER OF TIN ON SAID HEATED BODY, DEPOSITING A LAYER OF HIGH CONDUCTIVITY METALLIC MATERIAL ON SAID TIN DEPOSIT AND ALLOYING SAID TIN TO SAID BODY AT A TEMPERATURE BETWEEN 590 AND 610*C.
Claim 2
Independent Claim
63 words
THE METHOD OF FABRICATING A LOW RESISTANCE CONTACT TO A BODY OF N-TYPE GALLIUM ARSENIDE MATERIAL WHICH COMPRISES HEATING SAID BODY TO A TEMPERATURE BETWEEN 100 TO 150*C., DEPOSITING A LAYER OF TIN ON SAID HEATED BODY, DEPOSITING A LAYER OF HIGH CONDUCTIVITY METALLIC MATERIAL ON SAID TIN DEPOSIT AND ALLOYING SAID TIN TO SAID BODY AT A TEMPERATURE BETWEEN 590 AND 610*C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-08-07 | 1965-02-06 | 1965-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-08-07 | 1969-02-06 | 1969-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-08-07 | 1973-02-06 | 1973-08-08 | $7700.00 | Window Closed / Lapsed |