US2983655A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Treatment of semiconductive bodies
Assignee: AT&T Inc
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Filing: 1957-12-18
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Granted: 1961-05-09
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Expires: 1977-12-18
Abstract
No abstract record available.
Inventors
- 👤 Miles V Sullivan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 00:23
CPC Classifications
C; C25; C25D; C25D5/00; C25D5/02; C23; C23C; C23C18/00; C23C18/16; C23C18/18; C23C18/1851; C23C18/1896; C23F; C23F1/00; C25D7/00; C25D7/12; C25F; C25F3/00; C25F3/02; C25F3/12; H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P50/00; H10P50/60; H10P50/61; H10P50/613; H10P50/617
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
223 words
THE METHOD OF ELECTROLYTICALLY TREATING A PORTION OF THE SURFACE OF A SEMICONDUCTIVE BODY WHICH COMPRISES THE STEPS OF FLOATING A BODY CONSISTING ESSENTIALLY OF A SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM, SILICON, GERMANIUM-SILICON ALLOYS, AND GROUP III-GROUP V ALLOYS IN A BATH OF ELECTROLYTE SO THAT SAID PORTION IS IN CONTACT WITH SAID ELECTROLYTE, THE CONTACT ANGLE SUBTENDED BY THE SAID ELECTROLYTE AT THE JUNCTION OF THE AIR-LIQUID INTERFACE AND THE BODY SURFACE BEING IN THE RANGE OF FROM 90* TO 180*, AND SAID BODY HAVING A WEIGHT LESS THAN THE PRODUCT OF THE WETTED PERIMETER OF SAID BODY AND THE SURFACE TENSION OF SAID ELECTROLYTE, THE SURFACE AREA OF SAID BATH ELECTROLYTE BEING A MAXIMUM OF APPROXIMATELY 7 SQUARE INCHES AND HAVING A CONFIGURATION SUCH THAT ITS LONGEST DIMENSION IS NO GREATER THAN TWICE ITS SHORTEST DIMENSION, AND SAID ELECTROLYTE BEING CONTAINED IN A VESSEL OF SUCH COMPOSITION THAT IT WETS THE WALLS THEREOF, ALLOWING SAID BODY TO FLOAT TO THE GEOMETRIC CENTER OF THE SURFACE OF SAID ELECTROLYTE, CONTACTING SAID BODY WITH A PREPOSITIONED FIRST ELECTRODE, PLACING INTO SAID ELECTROLYTE A SECOND ELECTRODE, SAID SECOND ELECTRODE BEING CONNECTED THROUGH A CURRENT SOURCE TO SAID FIRST ELECTRODE THEREBY FORMING A CIRCUIT INCLUDING THE SAID SEMICONDUCTIVE BODY AND SAID ELECTROLYTE, AND CAUSING A CURRENT TO FLOW THROUGH SAID CIRCUIT.
Claim 2
Independent Claim
223 words
THE METHOD OF ELECTROLYTICALLY TREATING A PORTION OF THE SURFACE OF A SEMICONDUCTIVE BODY WHICH COMPRISES THE STEPS OF FLOATING A BODY CONSISTING ESSENTIALLY OF A SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM, SILICON, GERMANIUM-SILICON ALLOYS, AND GROUP III-GROUP V ALLOYS IN A BATH OF ELECTROLYTE SO THAT SAID PORTION IS IN CONTACT WITH SAID ELECTROLYTE, THE CONTACT ANGLE SUBTENDED BY THE SAID ELECTROLYTE AT THE JUNCTION OF THE AIR-LIQUID INTERFACE AND THE BODY SURFACE BEING IN THE RANGE OF FROM 90* TO 180*, AND SAID BODY HAVING A WEIGHT LESS THAN THE PRODUCT OF THE WETTED PERIMETER OF SAID BODY AND THE SURFACE TENSION OF SAID ELECTROLYTE, THE SURFACE AREA OF SAID BATH ELECTROLYTE BEING A MAXIMUM OF APPROXIMATELY 7 SQUARE INCHES AND HAVING A CONFIGURATION SUCH THAT ITS LONGEST DIMENSION IS NO GREATER THAN TWICE ITS SHORTEST DIMENSION, AND SAID ELECTROLYTE BEING CONTAINED IN A VESSEL OF SUCH COMPOSITION THAT IT WETS THE WALLS THEREOF, ALLOWING SAID BODY TO FLOAT TO THE GEOMETRIC CENTER OF THE SURFACE OF SAID ELECTROLYTE, CONTACTING SAID BODY WITH A PREPOSITIONED FIRST ELECTRODE, PLACING INTO SAID ELECTROLYTE A SECOND ELECTRODE, SAID SECOND ELECTRODE BEING CONNECTED THROUGH A CURRENT SOURCE TO SAID FIRST ELECTRODE THEREBY FORMING A CIRCUIT INCLUDING THE SAID SEMICONDUCTIVE BODY AND SAID ELECTROLYTE, AND CAUSING A CURRENT TO FLOW THROUGH SAID CIRCUIT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-05-08 | 1964-11-07 | 1965-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-05-08 | 1968-11-07 | 1969-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-05-08 | 1972-11-07 | 1973-05-09 | $7700.00 | Window Closed / Lapsed |