Method of manufacturing electrode systems comprising semi-conductive bodies, more particularly crystal diodes or transistors

Abstract

Abstract 786,277. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Dec. 13, 1954 [Dec. 15, 1953; April 20, 1954], No. 35983/54. Class 37. A method of making a point contact semiconductor device, e.g. the diode shown, comprising a semi-conductor crystal 10, in which a part of the crystal is cleaned by removal of a surface layer as by grinding and/or etching and subsequently assembled in an envelope 17, is characterized in that the surface is covered immediately after cleaning with an insulating layer 16 and a point contact electrode 18 pushed through the layer to puncture it and in that the region around the puncture is subsequently occupied by a viscous insulating layer 21. In - the example shown, the crystal, originally in the form of a monocrystal Ge or Si sphere 10, is copper plated, soldered to connecting pin 12, ground to a flat surface, etched and immediately afterwards dipped in or sprayed with insulation 16, e.g. polystyrene in benzene. A layer 21 of viscous material, e.g. polymethyl siloxanes, is then applied to layer 16 and pin 12 and pin 19 bearing cat's-whisker 18 are inserted in metal sleeves 20 sealed in envelope 17 until the whisker punctures layer 16. The viscous layer is then consolidated by spinning the tube about axis Y. Instead of polystyrene or cellulose ester, alkyd resin or polyisobutylene may be used for the insulating layer.

Inventors

• 👤 Jan Coenraad Van Vessem
• 👤 Grand Theodorus Le

Bibliographic Details