US2911706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semi-conductor device
Assignee: US Philips Corp
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Filing: 1954-12-03
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Granted: 1959-11-10
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Expires: 1974-12-03
Abstract
No abstract record available.
Inventors
- 👤 Wertwijn George
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; C; C23; C23F; C23F1/00; C23F1/02; H01; H01C; H01C7/00; H10D10/00; H10D99/00; H10P; H10P10/00; H10P50/00; H10P95/00; H10P95/50; H10W; H10W72/00; H10W72/071; H10W74/00; H10W74/10; H10W76/00; H10W76/10; H10W76/17; H10W76/60; Y; Y10; Y10T; Y10T74/00; Y10T74/18; Y10T74/18056; Y10T74/18088; Y10T74/1812
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
143 words
A METHOD OF MANUFACTURING A SEMI-CONDUCTOR DEVICE COMPRISING PROVIDING A SEMI-CONDUCTIVE MEMBER, FUSING AN ELECTRODE TO A PORTION OF A SURFACE OF SAID MEMBER, THEREBY ESTABLISHING AT THE JUCTION OF THE ELECTRODE AND THE SEMI-CONDUCTIVE MEMBER AN ANNULAR REGION OF CRYSTAL IMPERFECTIONS WHICH WOULD IMPAIR THE PROPERTIES OF THE DEVICE, THEREAFTER APPLYING TO SAID SURFACE OF SAID MEMBER AND THE SURFACE OF SAID FUSED ELECTRODE A METAL LAYER, THEREAFTER MECHANICALLY CUTTING AN ANNULAR GROOVE THROUGH THE METAL LAYER AND INTO THE SAID SURFACE OF THE SEMI-CONDUCTIVE MEMBER AT THE AREA OF SAID JUNCTION AND OF SUFFICIENT DEPTH TO REMOVE FROM SAID MEMBER SAID ANULAR REGION OF CRYSTAL IMPERFECTIONS, THEREAFTER APPLYING TO SAID SURFACE OF SAID SEMI-CONDUCTIVE MEMBER AN ETCHING SOLUTION CAPABLE OF REACTING WITH THE SEMI-CONDUCTIVE MEMBER BUT NOT WITH THE METAL LAYER, THEREBY TO ETCH THE AREA OF THE THUS-FORMED ANNULAR GROOVE.
Claim 2
Independent Claim
143 words
A METHOD OF MANUFACTURING A SEMI-CONDUCTOR DEVICE COMPRISING PROVIDING A SEMI-CONDUCTIVE MEMBER, FUSING AN ELECTRODE TO A PORTION OF A SURFACE OF SAID MEMBER, THEREBY ESTABLISHING AT THE JUCTION OF THE ELECTRODE AND THE SEMI-CONDUCTIVE MEMBER AN ANNULAR REGION OF CRYSTAL IMPERFECTIONS WHICH WOULD IMPAIR THE PROPERTIES OF THE DEVICE, THEREAFTER APPLYING TO SAID SURFACE OF SAID MEMBER AND THE SURFACE OF SAID FUSED ELECTRODE A METAL LAYER, THEREAFTER MECHANICALLY CUTTING AN ANNULAR GROOVE THROUGH THE METAL LAYER AND INTO THE SAID SURFACE OF THE SEMI-CONDUCTIVE MEMBER AT THE AREA OF SAID JUNCTION AND OF SUFFICIENT DEPTH TO REMOVE FROM SAID MEMBER SAID ANULAR REGION OF CRYSTAL IMPERFECTIONS, THEREAFTER APPLYING TO SAID SURFACE OF SAID SEMI-CONDUCTIVE MEMBER AN ETCHING SOLUTION CAPABLE OF REACTING WITH THE SEMI-CONDUCTIVE MEMBER BUT NOT WITH THE METAL LAYER, THEREBY TO ETCH THE AREA OF THE THUS-FORMED ANNULAR GROOVE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-11-09 | 1963-05-11 | 1963-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-11-09 | 1967-05-11 | 1967-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-11-09 | 1971-05-11 | 1971-11-10 | $7700.00 | Window Closed / Lapsed |