Fabrication of diffused junction semi-conductor devices

Claim 1

A PROCESS FOR FORMING A JUNCTION IN A GERMANIUM SEMICONDUCTOR DEVICE COMPRISING COATING A SURFACE OF A SEMICONDUCTOR BODY OF A FIRST CONDUCTIVITY TYPE WITH A CONDUCTIVITY TYPE DIRECTING IMPURITY MATERIAL OF SAID FIRST CONDUCTIVITY TYPE, EXPOSING SAID SEMICONDUCTOR BODY TO THE VAPOR OF AN IMPURITY MATERIAL OF A TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE AT AN ELEVATED TEMPERATURE IN A CONCENTRATION PROPER FOR VAPOR DIFFUSION, AND REMOVING THE EXPOSED SURFACES OF SAID SEMICONDUCTOR BODY TO A UNIFORM DEPTH GREATER THAN THE DEPTH OF PENETRATION OF SAID OPPOSITE CONDUCTIVITY TYPE DIRECTING IMPURITY MATERIAL FROM SAID VAPOR INTO SURFACES THAT ARE NOT COATED BUT NOT AS GREAT AS THE DEPTH OF PENETRATION UNDER SAID COATED AREA.