US2858239A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing selenium rectifiers
Assignee: Siemens Schuckertwerke AG
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Filing: 1956-03-13
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Granted: 1958-10-28
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Expires: 1976-03-13
Abstract
No abstract record available.
Inventors
- 👤 Nitsche Erich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:45
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/01; H10D48/04; H10D48/043; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/22; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3236; H10P14/34; H10P14/3402; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
152 words
A METHOD OF MAKING A DRY RECITIFER COMPRISING FORMING A SANDWICH COMPRISING A BASE PLATE, A FIRST LAYER OF SELENIUM AND A HALOGEN ELEMENT, THE FIRST LAYER BEING DISPOSED TOWARD THE BASE PLATE, AND A T LEAST ONE ADDITIONAL LAYER OF SELENIUM, A HALOGEN ELEMENT AND A SECOND MATERIAL WHICH INCREASES THE BLOCKING RESISTANCE, THE SECOND MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF THALLIUM, INDIUM, GALLIUM AND SULFUR AND BEING ADDED IN AN AMOUNT SUCH THAT THE ULTIMATE CONDUCTIVITY OF THE ADDITIONAL LAYER IN THE FINISHED RECTIFIER IS SMALLER THAN THE ULTIMATE CONDUCTIVITY OF THE SAME LAYER OBTAINABL BY THE HALOGEN ELEMENT ALONE, THE SANDWHICH FURTHER COMPRISING A COVER ELECTRODE APPLIED TO THE ADDITIONAL LAYER, THE COVER ELECTRODE BEING SUBSTANTIALLY FREE OF SAID SECOND MATERIAL, AND HEATING THE SEMICONDUCTOR BODY SO FORMED TO PRODUCED A CRYSTALLINE STRUCTURE AND TO INITIATE THE FORMATION OF A BLOCKING BARRIER LAYER ADJACENT THE COVER ELECTRODE.
Claim 2
Independent Claim
152 words
A METHOD OF MAKING A DRY RECITIFER COMPRISING FORMING A SANDWICH COMPRISING A BASE PLATE, A FIRST LAYER OF SELENIUM AND A HALOGEN ELEMENT, THE FIRST LAYER BEING DISPOSED TOWARD THE BASE PLATE, AND A T LEAST ONE ADDITIONAL LAYER OF SELENIUM, A HALOGEN ELEMENT AND A SECOND MATERIAL WHICH INCREASES THE BLOCKING RESISTANCE, THE SECOND MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF THALLIUM, INDIUM, GALLIUM AND SULFUR AND BEING ADDED IN AN AMOUNT SUCH THAT THE ULTIMATE CONDUCTIVITY OF THE ADDITIONAL LAYER IN THE FINISHED RECTIFIER IS SMALLER THAN THE ULTIMATE CONDUCTIVITY OF THE SAME LAYER OBTAINABL BY THE HALOGEN ELEMENT ALONE, THE SANDWHICH FURTHER COMPRISING A COVER ELECTRODE APPLIED TO THE ADDITIONAL LAYER, THE COVER ELECTRODE BEING SUBSTANTIALLY FREE OF SAID SECOND MATERIAL, AND HEATING THE SEMICONDUCTOR BODY SO FORMED TO PRODUCED A CRYSTALLINE STRUCTURE AND TO INITIATE THE FORMATION OF A BLOCKING BARRIER LAYER ADJACENT THE COVER ELECTRODE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-10-27 | 1962-04-28 | 1962-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-10-27 | 1966-04-28 | 1966-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-10-27 | 1970-04-28 | 1970-10-28 | $7700.00 | Window Closed / Lapsed |