US2845371A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of producing junctions in semiconductors
Assignee: Raytheon Co
•
Filing: 1953-11-27
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Granted: 1958-07-29
•
Expires: 1973-11-27
Abstract
No abstract record available.
Inventors
- 👤 Charles G Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:20
CPC Classifications
C; C30; C30B; C30B9/00; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10S164/00; Y10S164/04; Y10S438/00; Y10S438/955
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
THE METHOD OF MAKING A JUNCTION IN A BODY OF SEMICONDUCTOR MATERIAL, SAID METHOD COMPRISING PROVIDING A SINGLE CRYSTAL OF SE MICONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, DOPING SAID CRYSTAL WITH AN INITIAL CONCENTRATION OF A FIRST AND A SEC OND ELECTRICAL CONDUCTIVITY-TYPE DETERMINING IMPURITY ELEMENT, ONE OF SAID IMPURITY ELEMENTS HAVING A SUBSTANTIALLY HIGHER RATE OF EVAPORATION FROM SAID CRYSTAL THAN THE OTHER OF SAID INPURITY ELEMENTS FOR THE SAME CONDITION OF TEMPERATURE, AND HEATING A PREDEETERMINED AREA OF SAID CRYSTAL OF SAID SEMICONDUCTOR MATERIAL TO CAUSE SAID DOPING ELEMENT HAVING THE HIGHER RATE OF EVAPORATION TO EVAPORATE FROM SAID CRYSTAL THEREBY PROVIDING A PREDOMINANCE OF THE OTHER OF SAID IMPURITY ELEMENTS IN SAID PREDERMINED AREA
Claim 2
Independent Claim
122 words
THE METHOD OF MAKING A JUNCTION IN A BODY OF SEMICONDUCTOR MATERIAL, SAID METHOD COMPRISING PROVIDING A SINGLE CRYSTAL OF SE MICONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, DOPING SAID CRYSTAL WITH AN INITIAL CONCENTRATION OF A FIRST AND A SEC OND ELECTRICAL CONDUCTIVITY-TYPE DETERMINING IMPURITY ELEMENT, ONE OF SAID IMPURITY ELEMENTS HAVING A SUBSTANTIALLY HIGHER RATE OF EVAPORATION FROM SAID CRYSTAL THAN THE OTHER OF SAID INPURITY ELEMENTS FOR THE SAME CONDITION OF TEMPERATURE, AND HEATING A PREDEETERMINED AREA OF SAID CRYSTAL OF SAID SEMICONDUCTOR MATERIAL TO CAUSE SAID DOPING ELEMENT HAVING THE HIGHER RATE OF EVAPORATION TO EVAPORATE FROM SAID CRYSTAL THEREBY PROVIDING A PREDOMINANCE OF THE OTHER OF SAID IMPURITY ELEMENTS IN SAID PREDERMINED AREA
References Cited (Backward Citations)
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US2739088A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-07-28 | 1962-01-27 | 1962-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-07-28 | 1966-01-27 | 1966-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-07-28 | 1970-01-27 | 1970-07-29 | $7700.00 | Window Closed / Lapsed |