US2832702A
Expired / Lapsed
US
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Method of treating semiconductor bodies for translating devices
Assignee: Raytheon Co
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Filing: 1955-08-18
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Granted: 1958-04-29
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Expires: 1975-08-18
Abstract
No abstract record available.
Inventors
- 👤 Schwartz Bertram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:24
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10P; H10P95/00; H10W74/10; H10W74/131; Y; Y10; Y10S; Y10S438/00; Y10S438/906; Y10S438/958
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
96 words
THE METHOD OF SURFACE TREATMENT OF A SILICON BODY FOR USE IN A SEMICONDUCTOR SIGNAL TRANSLATING DEVICE COMPRISING ETCHING THE SURFACES OF SAID SILICON BODY, IMMERSING SAID SILICON BODY IN WATER, REMOVING SAID SILICON BODY FROM SAID WATER, DRYING SAID SURFACES TO REMOVE EXCESS WATER THEREFROM, IMMERSING SAID SILICON BODY IN A SOLUTION COMPRISING FROM APPROXIMATELY 10% TO 90% OF DICHLORODIMETHYLSILANE AND FROM APPROXIMATELY 90% TO 10% METHYLTRICHLOROSILANE, REMOVING SAID SILICON BODY FROM SAID SOLUTION, AND BAKING SAID SILICON BODY, WHEREBY VOLATILE COMPOUNDS ARE REMOVED FROM SAID SURFACE AFTER THE POLYMERIZATION OF SAID DIMETHYLDICHLOROSILANE AND METHYLTRICHLOROSILANE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-04-28 | 1961-10-28 | 1962-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-04-28 | 1965-10-28 | 1966-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-04-28 | 1969-10-28 | 1970-04-29 | $7700.00 | Window Closed / Lapsed |