US2825667A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of making surface alloyed semiconductor devices
Assignee: RCA Corp
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Filing: 1955-05-10
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Granted: 1958-03-04
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Expires: 1975-05-10
Abstract
No abstract record available.
Inventors
- 👤 Charles W Mueller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:18
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/04; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/92; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
113 words
METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF FIRST AFFIXING A BODY OF A CONDUCTIVITY TYPE DETERMINING ELECTRODE MATERIAL TO THE SURFACE OF A CRYSTALLINE SEMICONDUCTIVE BODY BY HEATING SAID ELECTRODE BODY AND SAID SEMICONDUCTIVE BODY TOGETHER TO A TEMPERATURE ABOVE THE MELTING POINT OF THE LOWEST MELTING POINT COMPOSITION IN THE ALLOY SYSTEM COMPRISING SAID ELECTRODE BODY MATERIAL AND SAID SEMICONDUCTIVE BODY MATERIAL, AND SUBSEQUENTLY HEATING SAID ELECTRODE BODY AND SAID SEMICONDUCTIVE BODY TO A SECOND TEMPERATURE HIGHER THAN SAID AFOREMENTIONED TEMPERATURE IN AN OXIDIZING ATMOSPHERE THEREBY TO DISSOLVE A SURFACE PORTION OF SAID SEMICONDUCTOR BODY IN SAID ELECTRODE MATERIAL AND TO FORM A RECTIFYING BARRIER IN SAID SEMICONDUCTIVE BODY.
Claim 2
Dependent Claim
113 words
METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF FIRST AFFIXING A BODY OF A CONDUCTIVITY TYPE DETERMINING ELECTRODE MATERIAL TO THE SURFACE OF A CRYSTALLINE SEMICONDUCTIVE BODY BY HEATING SAID ELECTRODE BODY AND SAID SEMICONDUCTIVE BODY TOGETHER TO A TEMPERATURE ABOVE THE MELTING POINT OF THE LOWEST MELTING POINT COMPOSITION IN THE ALLOY SYSTEM COMPRISING SAID ELECTRODE BODY MATERIAL AND SAID SEMICONDUCTIVE BODY MATERIAL, AND SUBSEQUENTLY HEATING SAID ELECTRODE BODY AND SAID SEMICONDUCTIVE BODY TO A SECOND TEMPERATURE HIGHER THAN SAID AFOREMENTIONED TEMPERATURE IN AN OXIDIZING ATMOSPHERE THEREBY TO DISSOLVE A SURFACE PORTION OF SAID SEMICONDUCTOR BODY IN SAID ELECTRODE MATERIAL AND TO FORM A RECTIFYING BARRIER IN SAID SEMICONDUCTIVE BODY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-03-03 | 1961-09-02 | 1962-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-03-03 | 1965-09-02 | 1966-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-03-03 | 1969-09-02 | 1970-03-04 | $7700.00 | Window Closed / Lapsed |