P-n junction device and method of making the same by local fusion

Claim 1

A METHOD OF PRODUCING A JUNCTION TRANSISTOR FROM A MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING CONDUCTION CHARACTERISTICS OF ONE SIGN AND CONTAINING DISPERSED THEREIN A FIRST ACTIVATOR ELEMENT FOR PRODUCING DOMINANT CONDUCTION CARRIERS OF SAID ONE SIGN AND A SECOND ACTIVATOR ELEMENT OF PRODUCING A LESSER NUMBER OF CONDUCTION CARRIERS OF THE OPPOSITE SIGN, THE EQUILIBRIUM SEGREGATION COEFFICIENTS OF SAID ACTIVATOR ELEMENT IN SAID SEMICONDUCTOR EACH BEING LESS THAN UNITY SAID FIRST ACTIVATOR ELEMENT HAVING A SUBSTANTIALLY LOWER SEGREGATION COEFFICIENT AT A LOW CRYSTAL GROWTH RATE WHICH INCREASES RELATIVE TO THAT OF SAID SECOND ACTIVATOR WITH INCREASE IN CRYSTAL GROWTH RATE, SAID FIRST ACTIVATOR AND SAID SECOND ACTIVATOR IMPURITIES BEING PRESENT WITHIN SAID BODY IN A RATIO OF 0.5 TO 1.0 TIMES THE RATIO OF THEIR MOLECULAR WEIGHTS TIMES THE INVERTED RATIO OF THEIR SEGREGATION COEFFICIENTS IN SAID SEMICONDUCTOR WHICH METHOD COMPRISES FUSING ONLY A PORTION OF SAID SEMICONDUCTOR TO PRODUCE A LIQUID-PHASE TO SOLID-PHASE INTERFACE THEREIN AND ALLOWING SAID FUSED PORTION TO COOL AT A RATE GREATER THAN 10 CENTIGRADE DEGREES PER SECOND AND TO RAPIDLY RECRYSTALLIZE FROM SAID INTERFACE TO FORM A FIRST RECRYSTALLIZED ZONE GROWN AT A RELATIVELY LOW GROWTH RATE HAVING DOMINANT CONDUCTION CHARACTERISTICS PROVIDED BY SAID SECOND ACTIVATOR ELEMENT, AND A SECOND RECRYSTALLIZED ZONE GROWN AT A RELATIVELY HIGH GROWTH RATE HAVING DOMINANT CONDUCTION CHARACTERISTICS PROVIDED BY SAID FIRST ACTIVATOR ELEMENT.

Claim 2

A METHOD OF PRODUCING A JUNCTION TRANSISTOR FROM A MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING CONDUCTION CHARACTERISTICS OF ONE SIGN AND CONTAINING DISPERSED THEREIN A FIRST ACTIVATOR ELEMENT FOR PRODUCING DOMINANT CONDUCTION CARRIERS OF SAID ONE SIGN AND A SECOND ACTIVATOR ELEMENT OF PRODUCING A LESSER NUMBER OF CONDUCTION CARRIERS OF THE OPPOSITE SIGN, THE EQUILIBRIUM SEGREGATION COEFFICIENTS OF SAID ACTIVATOR ELEMENT IN SAID SEMICONDUCTOR EACH BEING LESS THAN UNITY SAID FIRST ACTIVATOR ELEMENT HAVING A SUBSTANTIALLY LOWER SEGREGATION COEFFICIENT AT A LOW CRYSTAL GROWTH RATE WHICH INCREASES RELATIVE TO THAT OF SAID SECOND ACTIVATOR WITH INCREASE IN CRYSTAL GROWTH RATE, SAID FIRST ACTIVATOR AND SAID SECOND ACTIVATOR IMPURITIES BEING PRESENT WITHIN SAID BODY IN A RATIO OF 0.5 TO 1.0 TIMES THE RATIO OF THEIR MOLECULAR WEIGHTS TIMES THE INVERTED RATIO OF THEIR SEGREGATION COEFFICIENTS IN SAID SEMICONDUCTOR WHICH METHOD COMPRISES FUSING ONLY A PORTION OF SAID SEMICONDUCTOR TO PRODUCE A LIQUID-PHASE TO SOLID-PHASE INTERFACE THEREIN AND ALLOWING SAID FUSED PORTION TO COOL AT A RATE GREATER THAN 10 CENTIGRADE DEGREES PER SECOND AND TO RAPIDLY RECRYSTALLIZE FROM SAID INTERFACE TO FORM A FIRST RECRYSTALLIZED ZONE GROWN AT A RELATIVELY LOW GROWTH RATE HAVING DOMINANT CONDUCTION CHARACTERISTICS PROVIDED BY SAID SECOND ACTIVATOR ELEMENT, AND A SECOND RECRYSTALLIZED ZONE GROWN AT A RELATIVELY HIGH GROWTH RATE HAVING DOMINANT CONDUCTION CHARACTERISTICS PROVIDED BY SAID FIRST ACTIVATOR ELEMENT.