US2815304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making fused junction semiconductor devices
Assignee: Raytheon Co
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Filing: 1955-01-03
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Granted: 1957-12-03
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Expires: 1975-01-03
Abstract
No abstract record available.
Inventors
- 👤 Richard A Gudmundsen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:00
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/04; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
189 words
IN THE METHOD OF PRODUCING IN A BODY OF SEMICON-DUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON AN INTEGRAL REGROWN REGION SEPARATED FROM THE PARENT SEMICONDUCTOR BODY BY A RECTIFYING BARRIER TO OBTAIN A FUSED JUNCTION SEMICONDUCTOR DEVICE, THE METHOD COMPRISING THE STEPS OF ; PLACING A METAL SPECIMEN WHICH INCLUDES A SOLVENT METAL IN CONTACT WITH A REGION OF THE SEMICONDUCTOR BODY, SAID SOLVENT METAL HAVING A PREDETERMINED EVAPORATION RATE OF AT LEAST APPROXIMATELY 10-3 GRAMS/SQUARE CENTIMETER/SECOND AT AN ELEVATED TEMPERATURE ABOVE THE MELTING POINT OF THE SOLVENT METAL BUT BELOW THE MELTING POINT OF THE SEMICONDUCTOR BODY, HEATING THE SPECIMEN AND BODY TO SAID ELEVATED TEMPERATURE AND AT WHICH THE SOLVENT METAL EVAPORATES AT SAID PREDETERMINED RATE, WHEREBY THE MOLTEN SPECIMEN DISSOLVES SEMICONDUCTOR MATERIAL FROM THE REGION OF THE SEMICONDUCTOR BODY, AND MAINTAINING THE SPECIMEN AND THE BODY AT SAID ELEVATED TEMPERATURE UNTIL AT LEAST A MAJOR PORTION OF THE SOLVENT METAL HAS EVAPORATED, THEREBY CAUSING A PORTION OF THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE ONTO THE PARENT SEMICONDUCTOR BODY TO FORM THE REGROWN REGION SEPARATED FROM THE PARENT BODY BY A RECTIFYING BARRIER.
Claim 2
Dependent Claim
189 words
IN THE METHOD OF PRODUCING IN A BODY OF SEMICON-DUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON AN INTEGRAL REGROWN REGION SEPARATED FROM THE PARENT SEMICONDUCTOR BODY BY A RECTIFYING BARRIER TO OBTAIN A FUSED JUNCTION SEMICONDUCTOR DEVICE, THE METHOD COMPRISING THE STEPS OF ; PLACING A METAL SPECIMEN WHICH INCLUDES A SOLVENT METAL IN CONTACT WITH A REGION OF THE SEMICONDUCTOR BODY, SAID SOLVENT METAL HAVING A PREDETERMINED EVAPORATION RATE OF AT LEAST APPROXIMATELY 10-3 GRAMS/SQUARE CENTIMETER/SECOND AT AN ELEVATED TEMPERATURE ABOVE THE MELTING POINT OF THE SOLVENT METAL BUT BELOW THE MELTING POINT OF THE SEMICONDUCTOR BODY, HEATING THE SPECIMEN AND BODY TO SAID ELEVATED TEMPERATURE AND AT WHICH THE SOLVENT METAL EVAPORATES AT SAID PREDETERMINED RATE, WHEREBY THE MOLTEN SPECIMEN DISSOLVES SEMICONDUCTOR MATERIAL FROM THE REGION OF THE SEMICONDUCTOR BODY, AND MAINTAINING THE SPECIMEN AND THE BODY AT SAID ELEVATED TEMPERATURE UNTIL AT LEAST A MAJOR PORTION OF THE SOLVENT METAL HAS EVAPORATED, THEREBY CAUSING A PORTION OF THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE ONTO THE PARENT SEMICONDUCTOR BODY TO FORM THE REGROWN REGION SEPARATED FROM THE PARENT BODY BY A RECTIFYING BARRIER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-12-02 | 1961-06-03 | 1961-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-12-02 | 1965-06-03 | 1965-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-12-02 | 1969-06-03 | 1969-12-03 | $7700.00 | Window Closed / Lapsed |