Preparation of pure silicon

Claim 1

A PROCESS FOR PREPARING HYPERPURE ELEMENTAL SILICON WHICH COMPRISES REMOVING TRACE IMPURITIES FROM A RELATIVELY PURE SILICON HALIDE BY PASSING SAID HALIDE IN STHE VAPOR STATE INTO CONTACT WITH A SCAVENGING BED OF PURE, ELEMENTAL SILICON AT AN ELEVATED TEMPERATURE, REACTING THE EFFLUENT HALIDE VAPOR RESULTING FROM SAID CONTACT WITH A PURE VAPORIZED METAL REDUCTANT SELECTED FROM THE GROUP CONSISTING OF ZINC AND CADMIUM WITHIN A REACTION ZONE MAINTAINED AT A TEMPERATURE IN EXCESS OF THE DEW POINT OF SAID REDUCTANT AND ITS HALIDE REACTION PRODUCT, BUT BELOW THE MELTING POINT OF THE SILICON BEING DEPOSITED IN THE REACTION CHAMBER, DEPOSITING THE DESIRED ELEMENTAL SILICON PRODUCT IN SAID ZONE WHILE EXITING METAL HALIDEBEARING GASES THEREFROM, DISCONTINUING THE REACTION, COOLING SAID REACTION ZONE AND RECOVERING THE ELEMENTAL SILICON PRODUCT IN A COOLED STATE.