Preparation of pure silicon

Claim 1

AN IMPROVED PROCESS FOR THE MANUFACTURE OF HYPERPURE ELEMENTAL SILICON FROM A COMMERCIAL METAL REACTANT OF HIGH PURITY SELECT FROM THE GROUP CONSISTING OF ZINC AND CADMIUM AND A HALIDE OF SILICON OF HIGH PURITY WHICH COMPRISES REMOVING TRACE IMPURITIES FROM THE COMMERCIAL METAL REACTANT BY PASSING THE METAL AS A VAPOR INTO CONTACT WITH A SCAVENGING BED OF ELEMENTAL SILICON OF HIGH PURITY, COMBINING THE VAPOROUS METAL REACTANT SUBSEQUENT TO ITS CONTACT WITH THE BED OF ELEMENTAL SILICON WITH THE VAPOROUS SILICON HALIDE REACTANT WHILE THE VAPOROUS MIXTURE OF THE REACTANTS ARE CONFINED IN A REACTION CHAMBER MAINTAINED AT A TEMPERATURE IN EXCESS OF THE DEW POINT OF THE METAL REACTANT AND ITS HALIDE REACTION PRODUCT BUT BELOW THE MELTING POINT OF THE SILICON BEING DEPOSITED IN THE REACTION CHAMBER, CONTINUING THE ADMIXING OF THE TWO REACTANTS WITHIN THE REACTION CHAMBER WHERE THE ELEMENTAL SILICON PRODUCT IS DEPOSITED WHILE EXITING METAL HALIDE BEARING GASES THEREFROM AND RECOVERING SAID ELEMENTAL SILICON PRODUCT AFTER DISCONTINUING THE ADDITION OF THE REACTANTS AND COOLING THE REACTION CHAMBER.