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US2773745A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for the production of pure silicon in a coarse crystalline form

Assignee: EIDP Inc
•
Filing: 1954-07-20
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Granted: 1956-12-11
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Expires: 1974-07-20
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Abstract

No abstract record available.

Inventors

  • 👤 Butler Keith Huestis
  • 👤 Olson Carl Marcus

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 18:34
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/033

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 123 words
A PROCESS FOR THE PRODUCTION OF PURE 99.98+% SILICON IN A COARSE CRYSTALLINE AND LOOSELY COHERENT FORM WHICH COMPRISES MIXING A SEPARATELY HEATED, VAPOROUS STREAM OF A REDUCING METAL SELECTED FROM THE GROUP CONSISTING OF ZINC AND CADMIUM AT SUBSTANTIAL REACTION TEMPERATURE WITH A VAPOROUS SEPARATELY HEATED STREAM OF A TETRAHALIDE OF SILICON SELECTED FROM THE GROUP CONSISTING OF A CHLORIDE AND BROMIDE, ALSO AT A REACTION TEMPERATURE WITHIN A SILICA REACTION CHAMBER, THE WALLS OF WHICH ARE MAINTAINED AT A TEMPERATURE ABOVE THE DEW POINT OF THE REDUCING METAL AND OF THE DIHALIDE SALT BY-PRODUCT OF SAID REDUCING METAL FORMED IN THE PROCESS BUT NOT IN EXCESS OF A TEMPERATURE OF 1100* C., AND RECOVERING THE PURE CRYSTALLINE SILICON PRODUCT WHICH RESULTS.
Claim 2
Dependent Claim 123 words
A PROCESS FOR THE PRODUCTION OF PURE 99.98+% SILICON IN A COARSE CRYSTALLINE AND LOOSELY COHERENT FORM WHICH COMPRISES MIXING A SEPARATELY HEATED, VAPOROUS STREAM OF A REDUCING METAL SELECTED FROM THE GROUP CONSISTING OF ZINC AND CADMIUM AT SUBSTANTIAL REACTION TEMPERATURE WITH A VAPOROUS SEPARATELY HEATED STREAM OF A TETRAHALIDE OF SILICON SELECTED FROM THE GROUP CONSISTING OF A CHLORIDE AND BROMIDE, ALSO AT A REACTION TEMPERATURE WITHIN A SILICA REACTION CHAMBER, THE WALLS OF WHICH ARE MAINTAINED AT A TEMPERATURE ABOVE THE DEW POINT OF THE REDUCING METAL AND OF THE DIHALIDE SALT BY-PRODUCT OF SAID REDUCING METAL FORMED IN THE PROCESS BUT NOT IN EXCESS OF A TEMPERATURE OF 1100* C., AND RECOVERING THE PURE CRYSTALLINE SILICON PRODUCT WHICH RESULTS.

References Cited (Backward Citations)

US1306568A Cited
US1061256A Cited
US1241796A Cited
US1386227A Cited
GB435754A Cited
US2402582A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1959-12-11 1960-06-11 1960-12-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1963-12-11 1964-06-11 1964-12-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1967-12-11 1968-06-11 1968-12-11 $7700.00 Window Closed / Lapsed

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