US2725317A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating and heat treating semiconductors
Assignee: AT&T Inc
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Filing: 1952-04-24
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Granted: 1955-11-29
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Expires: 1972-04-24
Abstract
No abstract record available.
Inventors
- 👤 Joseph J Kleimack
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:51
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; C; C22; C22F; C22F3/00; H10D10/00; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
THE METHOD OF FABRICATING A TRANSISTOR HAVING A REDUCED MINORITY CARRIER STORAGE WHICH COMPRISES APPLYING EMITTER, BASE, AND RESTRICTED CONTACT AREA COLLECTOR ELECTRODES TO A GERMANIUM BODY, PASSING CURRENT BETWEEN THE COLLECTOR ELECTRODE AND THE BODY TO ELECTROFORM THE COLLECTOR, AND THEN SUBJECTING THE ASSEMBLED ELECTRODES AND BODY TO A PLURALITY OF TEMPERATURE CYCLES FROM AMBIENT TEMPERATURE TO ABOUT 75* C., EACH CYCLE BEING FOR ABOUT ONE-HALF HOUR.
Claim 2
Independent Claim
68 words
THE METHOD OF FABRICATING A TRANSISTOR HAVING A REDUCED MINORITY CARRIER STORAGE WHICH COMPRISES APPLYING EMITTER, BASE, AND RESTRICTED CONTACT AREA COLLECTOR ELECTRODES TO A GERMANIUM BODY, PASSING CURRENT BETWEEN THE COLLECTOR ELECTRODE AND THE BODY TO ELECTROFORM THE COLLECTOR, AND THEN SUBJECTING THE ASSEMBLED ELECTRODES AND BODY TO A PLURALITY OF TEMPERATURE CYCLES FROM AMBIENT TEMPERATURE TO ABOUT 75* C., EACH CYCLE BEING FOR ABOUT ONE-HALF HOUR.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1958-11-28 | 1959-05-30 | 1959-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1962-11-28 | 1963-05-30 | 1963-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1966-11-28 | 1967-05-30 | 1967-11-29 | $7700.00 | Window Closed / Lapsed |