US2601373A
Expired / Lapsed
US
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Method of making silicon carbide circuit elements
Assignee: AT&T Inc
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Filing: 1950-05-06
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Granted: 1952-06-24
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Expires: 1970-05-06
Abstract
No abstract record available.
Inventors
- 👤 Hans F Dienel
- 👤 Gordon K Teal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:08
CPC Classifications
H; H01; H01B; H01B1/00; H01B1/04; C; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
32 words
IN THE PROCESS OF FORMING A CONDUCTIVE ELEMENT CONTAINING SILICON CARBIDE, THE STEP OF FIRING THE BODY OF SAID ELEMENT IN AN ATMOSPHERE CONTAINING FROM 20 TO 100 PER CENT CARBON MONOXIDE.
Claim 2
Dependent Claim
32 words
IN THE PROCESS OF FORMING A CONDUCTIVE ELEMENT CONTAINING SILICON CARBIDE, THE STEP OF FIRING THE BODY OF SAID ELEMENT IN AN ATMOSPHERE CONTAINING FROM 20 TO 100 PER CENT CARBON MONOXIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1955-06-24 | 1955-12-24 | 1956-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1959-06-24 | 1959-12-24 | 1960-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1963-06-24 | 1963-12-24 | 1964-06-24 | $7700.00 | Window Closed / Lapsed |