Patent US1361451A successfully refreshed from Google Patents.
US20030133232A1
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US
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FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
Assignee: Headway Technologies Inc
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Filing: 2002-01-16
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Granted: —
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Expires: 2022-01-16
Abstract
Abstract A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
Inventors
- 👤 Min Li
- 👤 Simon Liao
- 👤 Masashi Sano
- 👤 Kiyoshi Noguchi
- 👤 Kochan Ju
- 👤 Cheng Horng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:43
CPC Classifications
C; C22; C22C; C22C38/00; C22C38/10; B; B32; B32B; B32B15/00; B32B15/01; B82; B82Y; B82Y10/00; B82Y25/00; B82Y40/00; C22C38/12; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/3254; H01F10/3259; H01F10/3268; H01F10/3272; H01F41/00; H01F41/14; H01F41/30; H01F41/302; H10; H10N; H10N50/00; H10N50/01; H10N50/10; G11B5/31; G11B5/3163; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/4902; Y10T29/49021; Y10T29/49032; Y10T29/49034; Y10T29/49036; Y10T29/49043; Y10T29/49044; Y10T29/49046
Claims Analysis
Total Claims: 87
Claim 1
Independent Claim
186 words
1 . A method for forming a bottom spin valve magnetorestive sensor element comprising: providing a substrate; forming on the substrate a magnetoresistive-property-enhancing seed layer; forming on said seed layer a pinning layer of antiferromagnetic material; forming on said pinning layer a synthetic antiferromagnetic pinned (SyAP) layer, said formation further comprising: forming on said pinning layer a second antiparallel (AP2) pinned layer of ferromagnetic material; forming on said second antiparallel (AP2) pinned layer a non-magnetic coupling layer; and forming on said non-magnetic coupling layer a first antiparallel (AP1) pinned layer to complete said SyAP layer; forming on said first antiparallel (AP1) layer of said SyAP layer a non-magnetic spacer layer; forming on said non-magnetic spacer layer a ferromagnetic free layer; forming on said ferromagnetic free layer a double-layer capping layer, said capping layer comprising a first layer of non-magnetic material on which is formed a second layer (NOL) of specularly reflecting material; thermally annealing said sensor element at a prescribed succession of temperatures in the presence of a corresponding sequence of external magnetic fields, establishing, thereby, the magnetizations of said free and said pinned magnetic layers.
Claim 2
Dependent Claim
186 words
1 . A method for forming a bottom spin valve magnetorestive sensor element comprising: providing a substrate; forming on the substrate a magnetoresistive-property-enhancing seed layer; forming on said seed layer a pinning layer of antiferromagnetic material; forming on said pinning layer a synthetic antiferromagnetic pinned (SyAP) layer, said formation further comprising: forming on said pinning layer a second antiparallel (AP2) pinned layer of ferromagnetic material; forming on said second antiparallel (AP2) pinned layer a non-magnetic coupling layer; and forming on said non-magnetic coupling layer a first antiparallel (AP1) pinned layer to complete said SyAP layer; forming on said first antiparallel (AP1) layer of said SyAP layer a non-magnetic spacer layer; forming on said non-magnetic spacer layer a ferromagnetic free layer; forming on said ferromagnetic free layer a double-layer capping layer, said capping layer comprising a first layer of non-magnetic material on which is formed a second layer (NOL) of specularly reflecting material; thermally annealing said sensor element at a prescribed succession of temperatures in the presence of a corresponding sequence of external magnetic fields, establishing, thereby, the magnetizations of said free and said pinned magnetic layers.
Claim 3
Dependent Claim
31 words
2 . The method of claim 1 wherein the magnetoresistive-property-enhancing seed layer is a layer of either NiCr or NiFeCr deposited to a thickness of between approximately 30 and 70 angstroms.
Claim 4
Dependent Claim
29 words
3 . The method of claim 1 wherein the antiferromagnetic pinning layer is a layer of antiferromagnetic material chosen from the group consisting of MnPt, IrMn, NiMn and MnPdPt.
Claim 5
Dependent Claim
28 words
4 . The method of claim 3 wherein the antiferromagnetic pinning layer is a layer of MnPt formed to a thickness of between approximately 80 and 250 angstroms.
Claim 6
Dependent Claim
30 words
5 . The method of claim 1 wherein the second antiparallel pinned layer (AP2) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 7
Dependent Claim
30 words
6 . The method of claim 5 wherein the second antiparallel pinned layer (AP2) is a layer of CoFe formed to a thickness of between approximately 10 and 25 angstroms.
Claim 8
Dependent Claim
28 words
7 . The method of claim 1 wherein the non-magnetic coupling layer is a layer of non-magnetic material chosen from the group consisting of Ru, Rh and Re.
Claim 9
Dependent Claim
28 words
8 . The method of claim 7 wherein the non-magnetic coupling layer is a layer of Ru formed to a thickness of between approximately 3 and 9 angstroms.
Claim 10
Dependent Claim
30 words
9 . The method of claim 1 wherein the first antiparallel pinned layer (AP1) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 11
Dependent Claim
30 words
10 . The method of claim 9 wherein the first antiparallel pinned layer (AP1) is a layer of CoFe formed to a thickness of between approximately 10 and 30 angstroms.
Claim 12
Dependent Claim
25 words
11 . The method of claim 1 wherein the non-magnetic spacer layer is a layer chosen from the group consisting of Cu, Ag and Au.
Claim 13
Dependent Claim
25 words
12 . The method of claim 11 wherein the non-magnetic spacer layer is a layer of Cu of thickness between approximately 8 and 30 angstroms.
Claim 14
Dependent Claim
22 words
13 . The method of claim 12 wherein the non-magnetic spacer layer is a layer of Cu of thickness approximately 18 angstroms.
Claim 15
Dependent Claim
22 words
14 . The method of claim 12 wherein the non-magnetic spacer layer is a layer of Cu of thickness approximately 19 angstroms.
Claim 16
Dependent Claim
28 words
15 . The method of claim 1 wherein the ferromagnetic free layer is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe, CoFeNi, CoFe/NiFe.
Claim 17
Dependent Claim
28 words
16 . The method of claim 15 wherein the ferromagnetic free layer is a layer of CoFe formed to a thickness of between approximately 10 and 60 angstroms.
Claim 18
Dependent Claim
34 words
17 . The method of claim 1 wherein the non-magnetic material layer of the capping layer is a layer of non-magnetic material chosen from the group consisting of Cu, Ag, Au, Rh and Ru.
Claim 19
Dependent Claim
32 words
18 . The method of claim 17 wherein the non-magnetic material layer of the capping layer is a layer of Cu formed to a thickness of between approximately 0 and 20 angstroms.
Claim 20
Dependent Claim
32 words
19 . The method of claim 1 wherein the specularly reflecting layer of the capping layer is a layer of FeTaO formed to a thickness of between approximately 5 and 40 angstroms.
Claim 21
Dependent Claim
42 words
20 . The method of claim 19 wherein the specularly reflecting layer of FeTaO is formed by an oxidation process applied to a layer of FeTa deposited on said non-magnetic material layer to a thickness of between approximately 3 and 30 angstroms.
Claim 22
Dependent Claim
33 words
21 . The method of claim 20 wherein said layer of deposited FeTa is a layer which is approximately 95% Fe by number of atoms and approximately 5% Ta by number of atoms.
Claim 23
Dependent Claim
64 words
22 . The method of claim 21 wherein said oxidation process is carried out in a PM5 TIM module in which there is supplied molecular oxygen at a flow rate of between approximately 5 and 50 sccm, a pressure of between approximately 0.05 and 0.5 mTorr for a time duration of between approximately 9 and 11 seconds, but where approximately 10 seconds is preferred.
Claim 24
Dependent Claim
40 words
23 . The method of claim 1 wherein the specularly reflecting capping layer is a layer of oxidized Fe or oxidized (Fe 65 Co 35 ) 97 V 3 formed to a thickness of between approximately 5 and 40 angstroms.
Claim 25
Dependent Claim
64 words
24 . The method of claim 23 wherein said oxidation process is carried out in a PM5 TIM module in which there is supplied molecular oxygen at a flow rate of between approximately 5 and 50 sccm, a pressure of between approximately 0.05 and 0.5 mTorr for a time duration of between approximately 9 and 11 seconds, but where approximately 10 seconds is preferred.
Claim 26
Dependent Claim
221 words
25 . The method of claim 1 wherein the annealing process comprises a first thermal anneal at a temperature of between approximately 240° and 300° C., but where 270° C. is preferred, in an external longitudinal magnetic field of between approximately 0.9 and 1.1 kOe, but where approximately 1 kOe is preferred, for a time of between approximately 9 and 11 min., but where approximately 10 min. is preferred, to magnetize the free layer; followed by a second thermal anneal at a temperature of between approximately 240° and 300° C., but where 270° C. is preferred, in an external magnetic field of between approximately 7 and 9 kOe, but where 8 kOe is preferred, said field directed transversely to that of the first thermal anneal, for a time of between approximately 2 and 4 hours, but where approximately 3 hours is preferred, to magnetize the pinned layer; followed by a third thermal anneal at a temperature of between approximately 190° and 240° C., but where approximately 210° C. is preferred, in an external longitudinal magnetic field of between approximately 180 and 220 Oe, but where 200 Oe is preferred, in the same direction as that of the first anneal, for a time of between approximately 1.5 and 2.5 hours, but where approximately 2 hours is preferred, to magnetize the free layer.
Claim 27
Dependent Claim
168 words
26 . A method for forming a bottom spin valve magnetorestive sensor element comprising: providing a substrate; forming on the substrate a magnetoresistive-property-enhancing seed layer; forming on said seed layer a pinning layer of antiferromagnetic material; forming on said pinning layer a synthetic antiferromagnetic pinned (SyAP) layer, said formation further comprising: forming on said pinning layer a second antiparallel (AP2) pinned layer of ferromagnetic material; forming on said second antiparallel (AP2) pinned layer a non-magnetic coupling layer; and forming on said non-magnetic coupling layer a first antiparallel (AP1) pinned layer to complete said SyAP layer; forming on said first antiparallel (AP1) layer of said SyAP layer a non-magnetic spacer layer; forming on said non-magnetic spacer layer a ferromagnetic free layer; forming on said ferromagnetic free layer a capping layer (NOL) of specularly reflecting material; thermally annealing said sensor element at a prescribed succession of temperatures in the presence of a corresponding sequence of external magnetic fields, establishing, thereby, the magnetizations of said free and said pinned magnetic layers.
Claim 28
Dependent Claim
168 words
26 . A method for forming a bottom spin valve magnetorestive sensor element comprising: providing a substrate; forming on the substrate a magnetoresistive-property-enhancing seed layer; forming on said seed layer a pinning layer of antiferromagnetic material; forming on said pinning layer a synthetic antiferromagnetic pinned (SyAP) layer, said formation further comprising: forming on said pinning layer a second antiparallel (AP2) pinned layer of ferromagnetic material; forming on said second antiparallel (AP2) pinned layer a non-magnetic coupling layer; and forming on said non-magnetic coupling layer a first antiparallel (AP1) pinned layer to complete said SyAP layer; forming on said first antiparallel (AP1) layer of said SyAP layer a non-magnetic spacer layer; forming on said non-magnetic spacer layer a ferromagnetic free layer; forming on said ferromagnetic free layer a capping layer (NOL) of specularly reflecting material; thermally annealing said sensor element at a prescribed succession of temperatures in the presence of a corresponding sequence of external magnetic fields, establishing, thereby, the magnetizations of said free and said pinned magnetic layers.
Claim 29
Dependent Claim
30 words
27 . The method of claim 26 wherein the seed layer is a layer of either NiCr or NiFeCr deposited to a thickness of between approximately 30 and 70 angstroms.
Claim 30
Dependent Claim
29 words
28 . The method of claim 26 wherein the antiferromagnetic pinning layer is a layer of antiferromagnetic material chosen from the group consisting of MnPt IrMn, NiMn and MnPdPt.
Claim 31
Dependent Claim
28 words
29 . The method of claim 28 wherein the antiferromagnetic pinning layer is a layer of MnPt formed to a thickness of between approximately 80 and 250 angstroms.
Claim 32
Dependent Claim
30 words
30 . The method of claim 26 wherein the second antiparallel pinned layer (AP2) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 33
Dependent Claim
30 words
31 . The method of claim 30 wherein the second antiparallel pinned layer (AP2) is a layer of CoFe formed to a thickness of between approximately 10 and 25 angstroms.
Claim 34
Dependent Claim
33 words
32 . The method of claim 26 wherein the second antiparallel pinned layer (AP2) is a triply laminated layer comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer.
Claim 35
Dependent Claim
29 words
33 . The method of claim 32 wherein said first and second ferromagnetic layers are layers of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 36
Dependent Claim
33 words
34 . The method of claim 33 wherein said first and second ferromagnetic layers are layers of CoFe, wherein each layer is formed to a thickness of between approximately 5 and 15 angstroms.
Claim 37
Dependent Claim
28 words
35 . The method of claim 32 wherein said non-magnetic spacer layer is a layer of non-magnetic material chosen from the group consisting of Ta, NiCr and NiFeCr.
Claim 38
Dependent Claim
28 words
36 . The method of claim 35 wherein said non-magnetic spacer layer is a layer of Ta deposited to a thickness of between approximately 0.5 and 5 angstroms.
Claim 39
Dependent Claim
28 words
37 . The method of claim 26 wherein said non-magnetic coupling layer is a layer of non-magnetic material chosen from the group consisting of Ru, Rh and Re.
Claim 40
Dependent Claim
28 words
38 . The method of claim 37 wherein said non-magnetic coupling layer is a layer of Ru formed to a thickness of between approximately 3 and 9 angstroms.
Claim 41
Dependent Claim
30 words
39 . The method of claim 26 wherein said first antiparallel pinned layer (AP1) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 42
Dependent Claim
30 words
40 . The method of claim 39 wherein said first antiparallel pinned layer (AP1) is a layer of CoFe formed to a thickness of between approximately 10 and 30 angstroms.
Claim 43
Dependent Claim
25 words
41 . The method of claim 26 wherein said non-magnetic spacer layer is a layer chosen from the group consisting of Cu, Ag and Au.
Claim 44
Dependent Claim
25 words
42 . The method of claim 41 wherein said non-magnetic spacer layer is a layer of Cu of thickness between approximately 8 and 30 angstroms.
Claim 45
Dependent Claim
22 words
43 . The method of claim 42 wherein said non-magnetic spacer layer is a layer of Cu of thickness approximately 19 angstroms.
Claim 46
Dependent Claim
29 words
44 . The method of claim 26 wherein said specularly reflecting capping layer is a layer of FeTaO formed to a thickness of between approximately 5 and 40 angstroms.
Claim 47
Dependent Claim
167 words
45 . A bottom spin valve magnetorestive sensor element comprising: a substrate; a magnetoresistive-property-enhancing seed layer formed on said substrate; a pinning layer of antiferromagnetic material formed on said seed layer; a synthetic antiferromagnetic pinned (SyAP) layer formed on said pinning layer, said SyAP layer further comprising: a second antiparallel (AP2) pinned layer of ferromagnetic material formed on said pinning layer; a non-magnetic coupling layer formed on said second antiparallel (AP2) pinned layer; and a first antiparallel (AP1) pinned layer formed on said non-magnetic coupling layer to complete said SyAP layer; a non-magnetic spacer layer formed on said first antiparallel (AP1) layer of said SyAP layer; a ferromagnetic free layer formed on said non-magnetic spacer layer; a double-layer capping layer formed on said ferromagnetic free layer, said capping layer comprising a first layer of non-magnetic material on which is formed a second layer (NOL) of specularly reflecting material; and said free layer being longitudinally magnetized and said pinned magnetic layers being magnetized transversely to said free layer.
Claim 48
Dependent Claim
167 words
45 . A bottom spin valve magnetorestive sensor element comprising: a substrate; a magnetoresistive-property-enhancing seed layer formed on said substrate; a pinning layer of antiferromagnetic material formed on said seed layer; a synthetic antiferromagnetic pinned (SyAP) layer formed on said pinning layer, said SyAP layer further comprising: a second antiparallel (AP2) pinned layer of ferromagnetic material formed on said pinning layer; a non-magnetic coupling layer formed on said second antiparallel (AP2) pinned layer; and a first antiparallel (AP1) pinned layer formed on said non-magnetic coupling layer to complete said SyAP layer; a non-magnetic spacer layer formed on said first antiparallel (AP1) layer of said SyAP layer; a ferromagnetic free layer formed on said non-magnetic spacer layer; a double-layer capping layer formed on said ferromagnetic free layer, said capping layer comprising a first layer of non-magnetic material on which is formed a second layer (NOL) of specularly reflecting material; and said free layer being longitudinally magnetized and said pinned magnetic layers being magnetized transversely to said free layer.
Claim 49
Dependent Claim
32 words
46 . The sensor element of claim 45 wherein said magnetoresistive-property-enhancing seed layer is a layer of either NiCr or NiFeCr deposited to a thickness of between approximately 30 and 70 angstroms.
Claim 50
Dependent Claim
30 words
47 . The sensor element of claim 45 wherein the antiferromagnetic pinning layer is a layer of antiferromagnetic material chosen from the group consisting of MnPt, IrMn, MnPtPd and NiMn.
Claim 51
Dependent Claim
29 words
48 . The sensor element of claim 47 wherein the antiferromagnetic pinning layer is a layer of MnPt formed to a thickness of between approximately 80 and 250 angstroms.
Claim 52
Dependent Claim
31 words
49 . The sensor element of claim 45 wherein the second antiparallel pinned layer (AP2) is a layer of ferromagnetic material chosen from the group consisting of CoFe NiFe and NiFeCo.
Claim 53
Dependent Claim
31 words
50 . The sensor element of claim 49 wherein the second antiparallel pinned layer (AP2) is a layer of CoFe formed to a thickness of between approximately 10 and 25 angstroms.
Claim 54
Dependent Claim
29 words
51 . The sensor element of claim 45 wherein the non-magnetic coupling layer is a layer of non-magnetic material chosen from the group consisting of Ru, Rh and Re.
Claim 55
Dependent Claim
29 words
52 . The sensor element of claim 51 wherein the non-magnetic coupling layer is a layer of Ru formed to a thickness of between approximately 3 and 9 angstroms.
Claim 56
Dependent Claim
31 words
53 . The sensor element of claim 45 wherein the first antiparallel pinned layer (AP1) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 57
Dependent Claim
31 words
54 . The sensor element of claim 53 wherein the first antiparallel pinned layer (AP1) is a layer of CoFe formed to a thickness of between approximately 10 and 30 angstroms.
Claim 58
Dependent Claim
26 words
55 . The sensor element of claim 45 wherein the non-magnetic spacer layer is a layer chosen from the group consisting of Cu, Ag and Au.
Claim 59
Dependent Claim
26 words
56 . The sensor element of claim 55 wherein the non-magnetic spacer layer is a layer of Cu of thickness between approximately 8 and 30 angstroms.
Claim 60
Dependent Claim
23 words
57 . The sensor element of claim 55 wherein the non-magnetic spacer layer is a layer of Cu of thickness approximately 18 angstroms.
Claim 61
Dependent Claim
23 words
58 . The sensor element of claim 55 wherein the non-magnetic spacer layer is a layer of Cu of thickness approximately 19 angstroms.
Claim 62
Dependent Claim
30 words
59 . The sensor element of claim 45 wherein the ferromagnetic free layer is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe, CoFeNi and CoFe/NiFe.
Claim 63
Dependent Claim
29 words
60 . The sensor element of claim 59 wherein the ferromagnetic free layer is a layer of CoFe formed to a thickness of between approximately 10 and 60 angstroms.
Claim 64
Dependent Claim
35 words
61 . The sensor element of claim 45 wherein the non-magnetic material layer of the capping layer is a layer of non-magnetic material chosen from the group consisting of Cu, Ag, Au, Rh and Ru.
Claim 65
Dependent Claim
33 words
62 . The sensor element of claim 61 wherein the non-magnetic material layer of the capping layer is a layer of Cu formed to a thickness of between approximately 0 and 20 angstroms.
Claim 66
Dependent Claim
30 words
63 . The sensor element of claim 45 wherein the specularly reflecting layer of the capping layer is a layer of FeTaO of between approximately 5 and 40 angstroms thickness.
Claim 67
Dependent Claim
41 words
64 . The sensor element of claim 45 wherein the specularly reflecting layer of the capping layer is a layer of oxidized Fe or oxidized (Fe 65 Co 35 ) 97 V 3 of between approximately 5 and 40 angstroms thickness.
Claim 68
Dependent Claim
149 words
65 . A bottom spin valve magnetorestive sensor element comprising: a substrate; a magnetoresistive-property-enhancing seed layer formed on the substrate; a pinning layer of antiferromagnetic material formed on said seed layer; a synthetic antiferromagnetic pinned (SyAP) layer formed on said pinning layer, said SyAP layer further comprising: a second antiparallel (AP2) pinned layer of ferromagnetic material formed on said pinning layer; a non-magnetic coupling layer formed on said second antiparallel (AP2) pinned layer; and a first antiparallel (AP1) pinned layer formed on said non-magnetic coupling layer to complete said SyAP layer; a non-magnetic spacer layer formed on said first antiparallel (AP1) layer of said SyAP layer; a ferromagnetic free layer formed on said non-magnetic spacer layer; a capping layer (NOL) of specularly reflecting material formed on said ferromagnetic free layer; and said free layer being longitudinally magnetized and said pinned magnetic layers being magnetized transversely to said free layer.
Claim 69
Dependent Claim
149 words
65 . A bottom spin valve magnetorestive sensor element comprising: a substrate; a magnetoresistive-property-enhancing seed layer formed on the substrate; a pinning layer of antiferromagnetic material formed on said seed layer; a synthetic antiferromagnetic pinned (SyAP) layer formed on said pinning layer, said SyAP layer further comprising: a second antiparallel (AP2) pinned layer of ferromagnetic material formed on said pinning layer; a non-magnetic coupling layer formed on said second antiparallel (AP2) pinned layer; and a first antiparallel (AP1) pinned layer formed on said non-magnetic coupling layer to complete said SyAP layer; a non-magnetic spacer layer formed on said first antiparallel (AP1) layer of said SyAP layer; a ferromagnetic free layer formed on said non-magnetic spacer layer; a capping layer (NOL) of specularly reflecting material formed on said ferromagnetic free layer; and said free layer being longitudinally magnetized and said pinned magnetic layers being magnetized transversely to said free layer.
Claim 70
Dependent Claim
31 words
66 . The sensor of claim 65 wherein said magnetoresistive-property-enhancing seed layer is a layer of either NiCr or NiFeCr deposited to a thickness of between approximately 30 and 70 angstroms.
Claim 71
Dependent Claim
29 words
67 . The sensor of claim 65 wherein said antiferromagnetic pinning layer is a layer of antiferromagnetic material chosen from the group consisting of MnPt, IrMn, NiMn and MnPdPt.
Claim 72
Dependent Claim
28 words
68 . The sensor of claim 67 wherein said antiferromagnetic pinning layer is a layer of MnPt formed to a thickness of between approximately 30 and 70 angstroms.
Claim 73
Dependent Claim
30 words
69 . The sensor of claim 65 wherein said second antiparallel pinned layer (AP2) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 74
Dependent Claim
30 words
70 . The sensor of claim 69 wherein the second antiparallel pinned layer (AP2) is a layer of CoFe formed to a thickness of between approximately 10 and 25 angstroms.
Claim 75
Dependent Claim
33 words
71 . The sensor of claim 65 wherein said second antiparallel pinned layer (AP2) is a triply laminated layer comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer.
Claim 76
Dependent Claim
29 words
72 . The sensor of claim 71 wherein said first and second ferromagnetic layers are layers of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 77
Dependent Claim
33 words
73 . The sensor of claim 72 wherein said first and second ferromagnetic layers are layers of CoFe, wherein each layer is formed to a thickness of between approximately 5 and 15 angstroms.
Claim 78
Dependent Claim
28 words
74 . The sensor of claim 71 wherein said non-magnetic spacer layer is a layer of non-magnetic material chosen from the group consisting of Ta, NiCr and NiFeCr.
Claim 79
Dependent Claim
28 words
75 . The sensor of claim 74 wherein said non-magnetic spacer layer is a layer of Ta deposited to a thickness of between approximately 0.5 and 5 angstroms.
Claim 80
Dependent Claim
28 words
76 . The sensor of claim 65 wherein said non-magnetic coupling layer is a layer of non-magnetic material chosen from the group consisting of Ru, Rh or Re.
Claim 81
Dependent Claim
28 words
77 . The sensor of claim 76 wherein said non-magnetic coupling layer is a layer of Ru formed to a thickness of between approximately 3 and 9 angstroms.
Claim 82
Dependent Claim
30 words
78 . The sensor of claim 65 wherein said first antiparallel pinned layer (AP1) is a layer of ferromagnetic material chosen from the group consisting of CoFe, NiFe and CoFeNi.
Claim 83
Dependent Claim
30 words
79 . The sensor of claim 78 wherein said first antiparallel pinned layer (AP1) is a layer of CoFe formed to a thickness of between approximately 10 and 30 angstroms.
Claim 84
Dependent Claim
25 words
80 . The sensor of claim 65 wherein said non-magnetic spacer layer is a layer chosen from the group consisting of Cu, Ag and Au.
Claim 85
Dependent Claim
25 words
81 . The sensor of claim 80 wherein said non-magnetic spacer layer is a layer of Cu of thickness between approximately 8 and 30 angstroms.
Claim 86
Dependent Claim
22 words
82 . The sensor of claim 81 wherein said non-magnetic spacer layer is a layer of Cu of thickness approximately 19 angstroms.
Claim 87
Dependent Claim
29 words
83 . The sensor of claim 65 wherein said specularly reflecting capping layer is a layer of FeTaO formed to a thickness of between approximately 5 and 40 angstroms.
References Cited (Backward Citations)
US6268985B1
Cited
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